Panasonic MA4X724 Datasheet

Schottky Barrier Diodes (SBD)

MA4X724

Silicon epitaxial planar type

For super-high speed switching circuit

For small current rectification

■ Features

•

Two MA3X721s are contained in one package (of a type in the
same direction)

•

Allowing to rectify under (I

•

High reliability

= 200 mA) condition

F(AV)

+ 0.2

2.8

− 0.3

+ 0.25

− 0.05

0.950.95

1.5

0.5 R

4

3

0.5

− 0.05

+ 0.1

0.4

0.65 ± 0.15 0.65 ± 0.15

− 0.05

+ 0.2

2.9

1.9 ± 0.2

1

2

0.2

Unit : mm

− 0.05

+ 0.1

1.45

0.4

− 0

+ 0.1

0.6

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Peak forward

current

Average forward

current

Non-repetitive peak

forward surge current

Single I

*

Double

Single I

*

Double

Single I

2

*

Double

*

1

  225

1

  150

1

  0.75

Junction temperature T

Storage temperature T

Note) *1 : Value per chip

V

F(AV)

R

RRM

FM

FSM

j

−55 to +150 °C

stg

300 mA

200 mA

150 °C

30 V

30 V

1A

− 0.1

+ 0.2

0.8

1.1

0.1 to 0.3

0.4 ± 0.2

Mini Type Package (4-pin)

Marking Symbol: M1T

Internal Connection

4

3

0 to 0.1

+ 0.1

1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1

1

2

− 0.06

0.16

*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 1 000 MHz

3. * : trr measuring instrument

VR = 30 V 50 µA

IF = 200 mA 0.55 V

F

VR = 0 V, f = 1 MHz 30 pF

t

IF = IR = 100 mA 3.0 ns

Irr = 10 mA, RL = 100 Ω

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Bias Application Unit N-50BU

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

= 0.35 ns

t

r

δ = 0.05

t

= 2 µs

I

F

= 10 mA

I

F

= 10 mA

I

R

= 100 Ω

R

L

t

rr

I

= 1 mA

rr

t

1

MA4X724

Schottky Barrier Diodes (SBD)

3

10

Ta = 150°C

2

10

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

0 0.80.2 0.4 0.6

IF  V

100°C 25°C

Forward voltage VF (V

Ct  V

40

)
pF

30

(

t

20

F

− 20°C

R

)

f = 1 MHz

= 25°C

T

a

VF  T

0.5

0.4

)
V

(

F

0.3

0.2

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

a

IF = 200 mA

Ambient temperature Ta (°C

IR  T

5

10

4

10

)
µA

(

R

3

10

2

10

a

VR = 30 V

100 mA

10 mA

5 V
1 V

IR  V

5

10

4

10

)
µA

(

R

3

10

2

10

Reverse current I

10

1

0 5 10 15 20 25 30

)

Reverse voltage VR (V

R

Ta = 150°C

100°C

25°C

)

10

Terminal capacitance C

0

0 5 10 15 20 25 30

Reverse voltage VR (V

Reverse current I

10

1

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2