Panasonic MA4X713, MA713 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4X713 (MA713)
Silicon epitaxial planar type
+0.2
+0.3
–0.3
2.8
–0.1
1.1
Unit: mm
+0.1
0.16
–0.06
5˚
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
For switching
For wave detection
■ Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
•
Forward voltage V
•
Optimum for high frequency rectification because of its short
reverse recovery time t
, optimum for low voltage rectification
F
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Peak forward Single I
current Double
*
Forward current Single I
*
Double
Junction temperature T
Storage temperature T
R
V
RM
FM
110
F
20
j
stg
Note)*: Value of each diode in double diodes used.
30 V
30 V
150 mA
30 mA
125 °C
−55 to +125 °C
+0.02
2.90
–0.05
1.9
±0.2
(0.95)(0.95)
34
+0.25
–0.05
0.5R
1.50
21
(0.2)
+0.10
0.60
–0.05
10˚
(0.65)
+0.2
–0.1
1.1
0 to 0.1
EIAJ: SC-61 Mini4-G1 Package
Marking Symbol: M1N
Internal Connection
3
4
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4. *: t
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 1 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
= 3 V
in
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
measurement circuit
rr
Input Pulse Output Pulse
t
t
p
r
V
R
10%
90%
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
rr
I
F
I
F
I
R
R
= 10 mA
= 10 mA
= 100 Ω
L
I
rr
t
= 1 mA
Note) The part number in the parenthesis shows conventional part number.
±0.2
0.4
Publication date: April 2004 SKH00103BED
1
MA4X713
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts between pins 1 and 4, 2 and 3
IF V
3
10
F
3
10
IR V
R
1.0
VF T
a
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
T
a
75°C 25°C
= 125°C
Forward voltage VF (V
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
a
V
15 V
= 30 V
R
−20°C
)
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
3
)
pF
(
t
2
1
R
Terminal capacitance C
= 125°C
T
a
)
f = 1 MHz
= 25°C
T
a
75°C
25°C
0.8
)
V
(
F
0.6
0.4
I
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
= 30 mA
F
3 mA
1 mA
)
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
SKH00103BED
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