Panasonic MA4X713 Datasheet
Schottky Barrier Diodes (SBD)
MA4X713
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
■ Features
•
Two MA3X704As are contained in one package (of a type in the
same direction)
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
•
Optimum for high-frequency rectification because of its short reverse recovery time (t
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) V
Peak forward
current
Forward current
(DC)
Junction temperature T
Storage temperature T
Note) * : Value per chip
)
F
)
rr
Parameter Symbol Rating Unit
30 V
150 mA
Single I
R
FM
Double* 110
Single I
F
30 mA
Double* 20
j
stg
125 °C
−55 to +125 °C
2.8
0.65 ± 0.15 0.65 ± 0.15
0.950.95
− 0.05
+ 0.2
2.9
1.9 ± 0.2
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1.5
4
3
Mini Type Package (4-pin)
Marking Symbol: M1N
Internal Connection
4
3
+ 0.25
− 0.05
+ 0.2
− 0.3
0.5 R
+ 0.1
− 0.05
0.4
0 to 0.1
Unit : mm
+ 0.1
1
0.5
2
0.2
+ 0.1
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
1
2
− 0.05
0.4
+ 0.1
− 0.06
0.16
1.45
− 0
0.6
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 200 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1.0 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
MA4X713
Schottky Barrier Diodes (SBD)
IF VF (Between pins 1 and 4, 2 and 3) VF Ta (Between pins 1 and 4, 2 and 3) IR VR (Between pins 1 and 4, 2 and 3)
3
10
1.0
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125°C
Forward voltage VF (V
75°C 25°C
− 20°C
)
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
IF = 30 mA
Ambient temperature Ta (°C
3 mA
1 mA
Ct VR (Between pins 1 and 4, 2 and 3) IR Ta (Between pins 1 and 4, 2 and 3)
3
3
)
pF
(
t
2
1
Terminal capacitance C
f = 1 MHz
= 25°C
T
a
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
V
15 V
= 30 V
R
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
Ta = 125°C
75°C
25°C
)
0
0 5 10 15 20 25 30
Reverse voltage VR (V
2
−2
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
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