Panasonic MA4X194 Datasheet
Switching Diodes
MA4X194
Silicon epitaxial planar type
For switching circuits
■ Features
•
Short reverse recovery time t
•
Two isolated elements contained in one package, allowing highdensity mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward
current
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Power dissipation P
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
Double I
Single I
Double I
Single I
*
Double I
rr
40 V
40 V
100 mA
75 mA/Unit
225 mA
170 mA/Unit
500 mA
375 mA/Unit
150 mW
150 °C
−55 to +150 °C
V
F(AV)
F(AV)
R
RRM
FRM
FRM
FSM
FSM
D
j
stg
2.8
+ 0.25
0.65 ± 0.15 0.65 ± 0.15
0.950.95
+ 0.2
− 0.05
2.9
1.9 ± 0.2
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1.5
− 0.05
4
3
Mini Type Package (4-pin)
Marking Symbol: M1F
Internal Connection
4
3
+ 0.2
− 0.3
0.5 R
+ 0.1
− 0.05
0.4
0 to 0.1
+ 0.1
− 0.05
1
0.4
0.5
2
0.2
+ 0.1
− 0.06
0.16
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
1
2
Unit : mm
1.45
+ 0.1
− 0
0.6
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R1
I
R2
Forward voltage (DC) V
Terminal capacitance C
Forward dynamic resistance r
3
Reverse recovery time
*
*
f
*
r
f
t
rr
Note) *1:rf measuring instrument: Nihon Koshuha Model TDC-121A
*2:rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3:trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 40 V 10 nA
VR = 35 V, Ta = 150°C10µA
IF = 100 mA 0.98 1.2 V
F
VR = 6 V, f = 1 MHz 1.0 2.0 pF
t
1
IF = 3 mA, f = 30 MHz 1.7 2.5 Ω
2
IF = 3 mA, f = 30 MHz 3.6
IF = 10 mA, VR = 6 V 100 ns
Irr = 0.1 · IR, RL = 100 Ω
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA4X194
Switching Diodes
IF V
3
10
2
10
)
Ta = 150°C
mA
(
100°C
F
10
25°C
– 20°C
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
a
)
VR = 30 V
6 V
IR V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 1020304050
R
Ta = 150°C
100°C
25°C
Reverse voltage VR (V
Ct V
10
5
)
pF
(
3
t
2
1
0.5
0.3
Terminal capacitance C
0.2
R
f = 1 MHz
= 25°C
T
a
VF T
1.2
1.0
)
V
(
0.8
F
0.6
0.4
a
IF = 100 mA
10 mA
3 mA
Forward voltage V
0.2
0
)
−40 0 40 80 120 160
Ambient temperature Ta (°C
)
−3
10
0 40 80 120 160
Ambient temperature Ta (°C
2
0.1
)
0 1020304050
Reverse voltage VR (V
)
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