Panasonic MA4X193, MA193 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4X193 (MA193)
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package
• Short reverse recovery time t
rr
• Bridge diodes for surface mounting
• Anode common + cathode common composite product
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Repetitive peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RRM
F(AV)
FRM
FSM
j
stg
80 V
80 V
70 mA
150 mA
250 mA
150 °C
−55 to +150 °C
0.16
+0.2
–0.3
2.8
5˚
1: Cathode 1
+0.3
–0.1
Anode 2
1.1
2: Cathode 2, 3
Unit: mm
+0.10
–0.06
0.60
+0.20
2.90
–0.05
1.9
±0.2
(0.95)(0.95)
34
21
(0.2)
+0.10
–0.05
10˚
0.5R
0.40
+0.25
+0.2
1.50
+0.10
–0.05
1.1
–0.05
(0.65)
–0.1
3: Anode 3
Cathode 4
0 to 0.1
4: Anode 1, 4
EIAJ: SC-61 Mini4-G1 Package
Marking Symbol: M2Z
Internal Connection
3
4
±0.2
0.4
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00047BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 70 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part number in the parenthesis shows conventional part number.
1
MA4X193
This product complies with the RoHS Directive (EU 2002/95/EC).
4-1 and 4-3 pins (anode common) characteristics charts
I
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
V
F
F
4
10
3
10
)
nA
(
R
2
10
= 150°C
T
a
100°C
25°C
−20°C
10
Reverse current I
1
IR V
R
= 150°C
T
a
100°C
25°C
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
VF T
a
I
= 100 mA
F
10 mA
3 mA
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
a
V
)
nA
(
4
10
3
10
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta
= 75 V
R
35 V
)
6 V
(°C)
−1
10
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
8
)
pF
6
(
t
4
2
Terminal capacitance C
0
0 20 40 60 80 100 120
R
Reverse voltage VR (V
)
f = 1 MHz
= 25°C
T
a
)
0
−40 0 40 80 120 160 200
Ambient temperature Ta
I
t
)
A
(
F(surge)
3
10
2
10
10
1
F(surge)
W
T
a
t
W
Non repetitive
Forward surge current I
−1
10
−1
Pulse width tW (ms
(°C)
= 25°C
I
F(surge)
10110
)
2
SKF00047BED
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