Panasonic MA4X174 Datasheet

Switching Diodes

MA4X174

Silicon planar type

For small power rectification and surge absorption

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

− 0.05

Unit : mm

■ Features

•

Two isolated elements contained in one package, allowing high­density mounting

•

High voltage (V

: 200 V) rectification is possible

R

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

V

Non-repetitive peak forward V

R

RRM

RSM

200 V

250 V

300 V

surge current

1

Output current

Repetitive peak forward current

Non-repetitive peak forward I

surge current

Junction temperature T

Storage temperature T

*

1,2

*

I

O

1

*

I

FRM

FSM

j

stg

100 mA

225 mA

500 mA

125 °C

−55 to +125 °C

Note) *1 : Value in single diode used

*2 : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Note) 1. Rated input/output frequency: 3 MHz

VR = 200 V 1.0 µA

IF = 100 mA 1.3 V

F

4

0.950.95

+ 0.2

− 0.05

2.9

1.9 ± 0.2

3

+ 0.2

− 0.1

0.8

1.1

0.1 to 0.3

0.4 ± 0.2

Mini Type Package (4-pin)

Marking Symbol: M2Q

Internal Connection

4

3

0.5 R

+ 0.1

− 0.05

0.4

0 to 0.1

1

0.5

2

0.2

1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1

1

2

+ 0.1

− 0.05

1.45

0.4

+ 0.1

− 0

0.6

+ 0.1

− 0.06

0.16

1

MA4X174

Switching Diodes

IF  V

1 000

100

)

mA
(

F

10

Ta = 125°C

1

75°C

Forward current I

25°C

0.1

− 20°C

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

VR = 200 V

a

100 V
10 V

100

10

)
nA

(

R

1

0.1

Reverse current I

0.01

0.001

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

IR  V

100

10

)
nA

(

R

1

0.1

Reverse current I

0.01

0.001
0 40 80 120 160 200 240

)

)
pF

(

t

Terminal capacitance C

)

Reverse voltage VR (V

2.4

2.0

1.6

1.2

0.8

0.4

0

0 40 80 120 160 200 240

Reverse voltage VR (V

Ta = 125°C

Ct  V

R

R IR

75°C

25°C

)

f = 1 MHz

= 25°C

T

a

)

1.6

1.4

)

1.2

V
(

F

1.0

0.8

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

1 000

300

)

A

(

100

F(surge)

30

10

3

1

Forward surge current I

0.3

0.1

0.03

VF  T

a

IF = 100 mA

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

0.3 3 301010.1

Pulse width tW (ms

W

Ta = 25°C

I

F(surge)

t

W

Non repetitive

)

)

2