Panasonic MA4X159A User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4X159A (MA159A)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time t
• Small terminal capacitance C
rr
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current Single I
Double 75
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Double 170
Single I
*
Double 375
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
+0.2
+0.3
–0.3
2.8
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
5˚
1: Cathode 1
0.60
+0.20
2.90
–0.05
1.9
±0.2
(0.95)(0.95)
34
21
(0.2)
+0.10
–0.05
10˚
0.5R
0.40
+0.25
+0.2
1.1
1.50
+0.10
–0.05
–0.05
(0.65)
–0.1
2: Cathode 2
3: Anode 2
0 to 0.1
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
Marking Symbol: M1B
Internal Connection
3
4
1
2
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00043BED
F
R
R
t
t
rr
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 0.95 1.20 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 0.9 2.0 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
F
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
Note) The part number in the parenthesis shows conventional part number.
1
MA4X159A
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 80 V
R
a
2
10
10
)
A
(µ
R
1
−1
10
T
a
V
R
= 125°C
75°C
25°C
−20°C
)
= 40 V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
= 125°C
T
a
= 75°C
T
a
= 25°C
T
a
0
20 40 60 80 100 120
Reverse voltage VR (V
10
)
pF
(
t
1
IR V
Ct V
R
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.2
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
I
10
)
A
(
10
F(surge)
3
2
10
F(surge)
a
t
Non repetitive
I
F
W
T
a
t
W
= 100 mA
10 mA
3 mA
1 mA
0.1 mA
= 25°C
I
F(surge)
)
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160
Ambient temperature Ta (°C
Terminal capacitance C
−1
10
)
0 102030405060
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00043BED
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