Panasonic MA4X159A Datasheet
Switching Diodes
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
0.65 ± 0.15 0.65 ± 0.15
0.5 R
1
2
4
3
0.950.95
1.9 ± 0.2
0.6
+ 0.1
− 0
1.1
+ 0.2
− 0.1
0.8
0.4 ± 0.2
0 to 0.1
0.16
+ 0.1
− 0.06
0.4
+ 0.1
− 0.05
0.2
0.4
+ 0.1
− 0.05
1.45
0.1 to 0.3
0.5
2.9
+ 0.2
− 0.05
MA4X159A
Silicon epitaxial planar type
For switching circuits
■ Features
•
Two isolated elements contained in one package, allowing highdensity mounting
•
Short reverse recovery time t
•
Small terminal capacitance, C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage V
Average forward
current
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
Double I
Single I
Double I
Single I
*
Double I
rr
t
R
RRM
F(AV)
F(AV)
FRM
FRM
FSM
FSM
j
stg
80 V
80 V
100 mA
75 mA/Unit
225 mA
170 mA/Unit
500 mA
375 mA/Unit
150 °C
−55 to +150 °C
Unit : mm
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1B
Internal Connection
4 1
32
■ Electrical Characteristics Ta = 25°C
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Parameter Symbol Conditions Min Typ Max Unit
R
*
t
rr
VR = 75 V 0.1 µA
IF = 100 mA 0.95 1.2 V
F
IR = 100 µA80V
R
VR = 0 V, f = 1 MHz 0.9 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
Irr = 0.1 · I
t
R
1
MA4X159A
Switching Diodes
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
IF V
Forward voltage VF (V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160
T
VR = 80 V
Ambient temperature Ta (°C
F
Ta = 125°C
a
40 V
75°C
25°C
− 20°C
)
)
IR V
2
10
10
)
µA
(
R
Reverse current I
Ta = 125°C
1
−1
10
−2
10
−3
10
75°C
25°C
0 20 40 60 80 100 120
R
Reverse voltage VR (V
Ct V
10
5
)
pF
(
3
t
2
1
0.5
0.3
Terminal capacitance C
0.2
0.1
0 102030405060
R IR
f = 1 MHz
T
a
Reverse voltage VR (V
)
= 25°C
)
1.2
VF T
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
I
1 000
)
300
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
F(surge)
0.3 3 301010.1
Pulse width tW (ms
a
t
IF = 100 mA
10 mA
3 mA
1 mA
0.1 mA
)
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
2
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