Panasonic MA4SD05X User Manual
Schottky Barrier Diodes (SBD)
Publication date: December 2004 SKH00144AED
Features
Two isolated elements are contained in one package, allowing high-density
mounting
Optimum for high frequency rectifi cation because of its short reverse recovery
time t
Absolute Maximum Ratings
T
a
= 25
= 25
Reverse voltage
V45V
Maximum peak reverse voltage
V45V
Forward current
IFmA
Peak forward current
Non-repetitive peak forward surge current
I
FSM
A
Junction temperature
j
–55 to +125
Note)
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
a
= 25
= 25
Typ
Forward voltage
V
F1IF
= 1 mA
V
V
F2IF
= 10 mA
V
F3
= 100 mA
Reverse current
V
= 40 V
= 40 V
A
Terminal capacitance
t
V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
pF
Reverse recovery time
t
= 100 mA, I
= 100 mA, I
= 10 mA
= 10 mA
R
L
= 100
= 100
Ω
2.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
rr
measurement circuit
measurement circuit
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1 SSMini4-F1 Package
1.6±0.05
5°
1.
0±0.05
1.15±0.05
0.01±0.01
1.6±0.1
0.25±0.05
0.55±0.1
0.10±0.03
1 2
5°
(0.225
)
(0.15)
4 3
1 2
34
This product complies with the RoHS Directive (EU 2002/95/EC).
2
SKH00144AED
I
F VF
I
R VR
C
C
t
V
R
0
0.4
0.8
1.2
10
3
10
2
10
1
10
−1
10
−2
10
−3
MA4SD05X_ IF-V
F
Forward current I
F
(mA)
Forward voltage VF (V)
Ta = 125°C
75°C
25°C
0
20
40
60
10
3
10
2
10
1
10
−1
10
−2
MA4SD05X_ IR-V
R
Reverse current I
R
(µA)
Reverse voltage VR (V)
Ta = 125°C
75°C
25°C
0
20
40
60
25
20
15
10
5
0
MA4SD05X_ Ct-V
R
Terminal capacitance C
t
(pF)
Reverse voltage VR (V)
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
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