Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4SD01
Silicon epitaxial planar type
For high speed switching
■ Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Two MA3S781 (MA781) is contained in one package (of a type
in the same direction)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
V
Forward current Single I
Double 20
Peak forward current
Single I
Double 110
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
−55 to +125 °C
Unit: mm
1.6
±0.05
1.0
5˚
1: Anode 1
±0.05
43
±0.05
1.15
12
0.25
±0.05
±0.01
0.01
±0.1
1.6
0.55
5˚
(0.225)
0.10
2: Anode 2
3: Cathode 2
4: Cathode 1 SSMini4-F1 Package
Marking Symbol: M1N
Internal Connection
±0.1
±0.03
(0.15)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η VIN = 3 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4. *: t
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00102CED
Wave Form Analyzer
(SAS-8130)
R
i
IF = 1 mA 0.35 V
IF = 30 mA 0.9
VR = 30 V 0.5 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
measurement circuit
rr
Input Pulse Output Pulse
t
t
p
= 50 Ω
r
10%
90%
V
R
t
p
t
r
δ = 0.05
Note) The part number in the parenthesis shows conventional part number.
= 2 µs
= 0.35 ns
t
I
F
I
= 10 mA
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
MA4SD01
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
–1
10
–2
10
Ta = 125°C
0 0.4 0.8 1.2
F
75°C 25°C
Forward voltage VF (V
IR T
2
10
)
10
A
(µ
R
1
a
−20°C
)
VR = 30 V
10 V
1 V
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ct V
3.0
)
pF
(
t
2.0
R
Ta = 125°C
75°C
25°C
)
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
IF = 30 mA
3 mA
1 mA
Ambient temperature Ta (°C
I
t
)
A
(
F(surge)
3
10
2
10
10
F(surge)
W
Ta = 25°C
t
W
I
F(surge)
)
−1
Reverse current I
10
−2
10
−40 40 120 200
Ambient temperature Ta (°C
1.0
Terminal capacitance C
0
)
0102030
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
10
Pulse width tW (ms
110
)
2
SKH00102CED