Panasonic MA4S713 Datasheet
Schottky Barrier Diodes (SBD)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
MA4S713
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
■ Features
•
Small S-mini type 4-pin package
•
Two isolated elements contained in one package, allowing highdensity mounting
•
Flat lead type package, resulting in promotion of the actual mounting
ratio and solderability with a high-speed mounter
•
Optimum for low-voltage rectification because of its low forward rise
voltage (V
•
Optimum for high-frequency rectification because of its short reverse
recovery time (t
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) V
Peak forward current V
Peak forward
current
Forward current
(DC)
Junction temperature T
Storage temperature T
Note) * : Value per chip
)
F
)
rr
Parameter Symbol Rating Unit
30 V
30 V
150 mA
Single I
R
RM
FM
Double* 110
Single I
F
30 mA
Double* 20
j
stg
125 °C
−55 to +125 °C
2.1 ± 0.1
1.25 ± 0.1
1
2.0 ± 0.1
1.3 ± 0.1
23
0.7 ± 0.1
S-Mini Type Package (4-pin)
Marking Symbol: M1N
Internal Connection
1
2
Unit : mm
4
0.3 ± 0.05
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
4
3
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
1
MA4S713
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 125°C
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C 25°C
Forward voltage VF (V
IR T
1 000
100
)
µA
(
R
10
1
Reverse current I
0.1
0.01
−40 0 40 80 120 160 200
a
VR = 30 V
10 V
1 V
Ambient temperature Ta (°C
− 20°C
)
VF T
Ct V
a
IF = 30 mA
3 mA
1 mA
)
R
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
3.0
2.5
)
pF
(
t
2.0
1.5
1.0
Terminal capacitance C
0.5
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03 30
IR V
R
Reverse voltage VR (V
I
t
F(surge)
0.1 1 10 6030.3
W
Ta = 25°C
t
Pulse width tW (ms
Ta = 125°C
75°C
25°C
)
I
F(surge)
W
)
2
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