Panasonic MA4S159 Datasheet
Switching Diodes
2.1 ± 0.1
1.25 ± 0.1
2.0 ± 0.1
1.3 ± 0.1
0.3 ± 0.05
0.7 ± 0.1
1
23
4
MA4S159
Silicon epitaxial planar type
For switching circuits
■ Features
•
Small S-mini type 4-pin package
•
Two isolated elements contained in one package, allowing highdensity mounting
•
Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
•
Short reverse recovery time t
•
Small terminal capacitance, C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Average forward Single I
current Double 75
Peak forward Single I
current Double 170
Non-repetitive peak
forward surge current*Double 375
Junction temperature T
Storage temperature T
Note) * : t = 1 s
Single I
rr
t
R
RM
F(AV)
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
S-Mini Type Package (4-pin)
Marking Symbol: M1B
Internal Connection
1
2
Unit : mm
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
4
3
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
*
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
R
F
R
t
t
rr
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 0.1 µA
IF = 100 mA 0.95 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 0.9 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA4S159
Switching Diodes
IF V
T
VR = 75 V
F
F
a
3
10
2
10
)
Ta = 150°C
mA
(
Forward current I
100°C
F
10
10
25°C
10
− 20°C
1
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage V
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature T
(V)
35 V
6 V
a
(°C)
IR V
Ct V
R
Ta = 150°C
100°C
25°C
R
R IR
f = 1 MHz
= 25°C
T
a
(V)
R
(V)
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
0 20406080100120
Reverse voltage V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
0 20406080100120
Reverse voltage V
VF T
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
Forward voltage V
0.4
0.2
0
−40 0 40 80 120 160 200
a
IF = 100 mA
Ambient temperature T
I
t
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
F(surge)
0.3 3 301010.1
W
Non repetitive
Pulse width tW (ms
10 mA
3 mA
(°C)
a
Ta = 25°C
I
F(surge)
t
W
)
2
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