Panasonic MA4S111 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4S111
Silicon epitaxial planar type
For switching circuits
1.6
±0.05
1.0
±0.05
43
Unit: mm
0.55
±0.1
■ Features
•
Allowing high-density mounting
•
Short reverse recovery time t
•
Small terminal capacitance C
rr
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current Single I
R
RM
F
Double 75
Repetitive peak Single I
FRM
forward current Double 170
Junction temperature T
Operating ambient temperature T
Storage temperature T
j
opr
stg
80 V
80 V
100 mA
225 mA
150 °C
−30 to +85 °C
−55 to +150 °C
±0.05
±0.1
1.6
1.15
12
0.25
±0.05
5˚
±0.01
0.01
Marking Symbol: M1B
Internal Connection
4
1
0.10
(0.225)
±0.03
(0.15)
5˚
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
3
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Publication date: July 2004 SKF00067AED
F
R
R
t
t
rr
IF = 100 mA 0.95 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 0.6 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
I
= 10 mA
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
rr
= 0.1 I
t
R
1
MA4S111
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
A
(m
F
10
1
Forward current I
−1
10
−2
10
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
R
a
= 75 V
5
10
4
10
)
A
(n
R
3
10
2
10
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°
35 V
6 V
IR V
Ct V
R
R
= 150°
T
a
C
100°
C
25°
f = 1 MHz
= 25°
T
a
1.6
C
1.4
)
1.2
V
(
F
1.0
0.8
0.6
Forward voltage V
0.4
0.2
0
−40 0 40 80 120 160 200
)
000
1
C
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
)
5
10
4
10
)
A
(n
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
)
)
pF
(
t
Terminal capacitance C
C)
Reverse voltage VR (V
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20406080100120
Reverse voltage VR (V
VF T
a
= 100 mA
I
F
10 mA
Ambient temperature Ta (°
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
= 25°
T
a
t
W
Non repetitive
)
I
3 mA
C)
C
F(surge)
2
SKF00067AED
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