Panasonic MA3ZD12 Datasheet
Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
S-mini type 3-pin package
•
Allowing to rectify under (I
•
Low forward rise voltage V
•
Allowing high-density mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
2
Average forward current
Non-repetitive peak forward I
surge current
*1
Junction temperature T
Storage temperature T
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2: Mounted on a alumina printed circuit board
*
= 700 mA) condition
F(AV)
(VF < 0.45 V)
F
R
V
RRM
I
F(AV)
FSM
j
−55 to +125 °C
stg
20 V
25 V
700 mA
2A
125 °C
2.1 ± 0.1
1.25 ± 0.1 0.4250.425
1
1.3 ± 0.1
2.0 ± 0.2
0.65 0.65
2
0.9 ± 0.1
Flat S-Mini Type Package (3-pin)
Marking Symbol: M5E
Internal Connection
1
2
3
Unit : mm
+ 0.1
− 0
0.3
3
+ 0.1
− 0.05
0.15
1 : Anode
2 : NC
3 : Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
VR = 20 V 200 µA
IF = 700 mA 0.45 V
F
VR = 0 V, f = 1 MHz 100 pF
t
IF = IR = 100 mA 7 ns
Irr = 10 mA, RL = 100 Ω
1
MA3ZD12
Schottky Barrier Diodes (SBD)
IF V
1
Ta = 125°C
)
−1
10
A
(
F
−2
10
−3
10
−4
10
Forward current I
−5
10
−6
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
5
10
4
10
)
mA
(
R
3
10
2
10
Reverse current I
10
75°C
25°C
− 20°C
IR T
VR = 20 V
F
0.5
0.4
)
V
(
F
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120
)
a
10 V
1 V
120
100
)
pF
(
t
80
60
40
Terminal capacitance C
20
VF T
a
IF = 700 mA
100 mA
3 mA
Ambient temperature Ta (°C
Ct V
R
Ta = 25°C
−1
10
−2
10
)
A
(
R
−3
10
−4
10
Reverse current I
−5
10
−6
10
0 5 10 15 20 25 30
)
IR V
R
Ta = 125°C
75°C
25°C
Reverse voltage VR (V
)
1
0 20406080100120140
Ambient temperature Ta (°C
2
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
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