Panasonic MA3Z7930G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3Z7930G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
Two MA3Z792 (MA792) is contained in one package (series connection)
•
I
= 100 mA rectification is possible
F(AV)
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage VF and good rectification efficiency
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current Single I
R
RRM
F
Series 70
Peak forward Single I
FM
current Series 200
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
30 V
30 V
100 mA
300 mA
1A
125 °C
−55 to +125 °C
■ Package
•
Code
SMini3-F2
•
Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Marking Symbol: M4A
■ Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz 4.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2007 SKH00217AED
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
t
IF = IR = 100 mA 2.0 ns
I
= 10 mA, RL = 100 Ω
rr
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA3Z7930G
3
10
I
This product complies with the RoHS Directive (EU 2002/95/EC).
V
F
F
4
10
IR V
R
VF T
1.0
a
2
10
)
mA
(
Ta = 125°C
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
75°C 25°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
−20°C
)
VR = 30 V
3 V
1 V
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
24
20
)
pF
(
t
16
12
8
Terminal capacitance C
4
R
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
0.8
)
V
(
F
0.6
I
0.4
F
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
10 mA
3 mA
Ambient temperature Ta (°C
= 100 mA
)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
SKH00217AED
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