Panasonic MA3Z792E, MA3Z792D User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3Z792D (MA792WA), MA3Z792E (MA792WK)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
Two MA3Z792 (MA792) is contained in one package
•
Forward current (Average) I
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage VF and good rectification efficiency
= 100 mA rectification is possible
F(AV)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current Single I
*
Double
Peak forward Single I
current Double
Non-repetitive peak forward I
surge current
2
*
*
Junction temperature T
Storage temperature T
R
RRM
F
1
FM
1
FSM
j
stg
Note)*1: Value of each diode in double diodes used.
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
30 V
30 V
100 mA
70
300 mA
200
1A
125 °C
−55 to +125 °C
+0.1
0.3
–0
±0.1
±0.1
2.1
1.25
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
5˚
5˚
0 to 0.1
Unit: mm
+0.1
0.15
–0.05
(0.425)
±0.1
0.9
(0.15)
MA3Z792D MA3Z792E
1 Cathode 1 Anode 1
SMini3-F1 Package
2 Cathode 2 Anode 2
3 Anode Cathode
Marking Symbol
• MA3Z792D: M3Y • MA3Z792E: M3Z
Internal Connection
3
12
D
3
12
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.*: t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00097BED
A
F
R
t
t
rr
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
IF = IR = 100 mA 2 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
t
r
δ = 0.05
= 2 µs
= 0.35 ns
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
Note) The part numbers in the parenthesis show conventional part number.
1
MA3Z792D, MA3Z792E
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
Ta = 125°C
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
75°C 25°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
−20°C
VR = 30 V
3 V
1 V
IR V
Ct V
R
R
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
24
20
)
pF
(
t
16
12
8
Terminal capacitance C
4
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
SKH00097BED
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