Panasonic MA3Z792D Datasheet
Schottky Barrier Diodes (SBD)
1.25 ± 0.1
1.3 ± 0.1
2.0 ± 0.2
0.9 ± 0.1
0.650.65
0.425 0.425
0.3
+ 0.1
− 0
2.1 ± 0.1
0.15
+ 0.1
− 0.05
1
2
3
MA3Z792D
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
■ Features
•
Two MA3Z792s diodes (anode common) are contained in the Smini type 3-pin package
•
Allowing to rectify under (I
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
Low V
(forward rise voltage), with high rectification efficiency
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward
current
Average forward
current
Non-repetitive peak forward I
1
surge current
*
Junction temperature T
Storage temperature T
Note) *1:
The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2: Value per chip
Single I
*
Double
Single I
*
Double
= 100 mA) condition
F(AV)
R
V
RRM
FM
2
F(AV)
2
FSM
j
stg
30 V
30 V
300 mA
200
100 mA
70
1A
125 °C
−55 to +125 °C
Unit : mm
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
Flat S-Mini Type Package (3-pin)
Marking Symbol: M3Y
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Parameter Symbol Conditions Min Typ Max Unit
R
F
t
*
t
rr
VR = 30 V 15 µA
IF = 100 mA 0.55 V
VR = 0 V, f = 1 MHz 20 pF
IF = IR = 100 mA 2 ns
Irr = 10 mA, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA3Z792D
Schottky Barrier Diodes (SBD)
3
IF V
10
2
10
)
mA
(
Ta = 125°C
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
75°C 25°C
Forward voltage VF (V
)
pF
(
Ct V
24
20
t
16
12
R
− 20°C
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
IR T
4
10
3
10
)
µA
(
R
2
10
a
IF = 100 mA
10 mA
3 mA
a
VR = 30 V
3 V
1 V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
)
IR V
R
Ta = 125°C
Reverse voltage VR (V
75°C
25°C
)
8
Terminal capacitance C
4
0
0 5 10 15 20 25 30
Reverse voltage VR (V
10
Reverse current I
1
−1
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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