Panasonic MA3Z551 Datasheet
PIN Diodes
2.1 ± 0.1
1.3 ± 0.10.9 ± 0.1
0.7 ± 0.1
0.3
+ 0.1
− 0 0.15
+ 0.1
− 0.05
2.0 ± 0.2
1.25 ± 0.1 0.4250.425
1
3
2
0.650.2 0.65
0 to 0.1
0.2 ± 0.1
MA3Z551
Silicon epitaxial planar type
For high-frequency variable resistor attenuator
■ Features
•
Small diode capacitance C
•
Large variable range of forward dynamic resistance r
•
Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Power dissipation P
Operating ambient temperature
Storage temperature T
D
f
R
RM
F
D
T
opr
stg
40 V
45 V
100 mA
150 mW
−25 to +85 °C
−55 to +150 °C
Unit : mm
1 : Anode
2 : NC
3 : Cathode
EIAJ：SC-70
S-Mini Type Package (3-pin)
Marking Symbol: MY
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
R
F
D
r
f1
r
f2
Note) 1．Rated input/output frequency: 100 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 40 V 100 nA
IF = 100 mA 1.05 1.2 V
VR = 15 V, f = 1 MHz 0.3 0.5 pF
IF = 10 µA, f = 100 MHz 1 2 kΩ
IF = 10 mA, f = 100 MHz 6 10 Ω
1
MA3Z551
PIN Diodes
IF V
120
100
F
)
mA
(
F
80
60
40
Ta = 60°C
Forward current I
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
25°C
− 40°C
)
10
5
)
pF
3
(
D
2
1
0.5
0.3
Diode capacitance C
0.2
0.1
0 8 16 24 324 1220283640
CD V
R
f = 1 MHz
T
a
Reverse voltage VR (V
= 25°C
)
1 000
100
)
nA
(
R
10
1
Reverse current I
0.1
0.01
0 40 80 120 16020 60 100 140
IR T
Ambient temperature Ta (°C
a
VR = 40 V
)
2
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