Panasonic MA3Z080E, MA3Z080D Datasheet

Band Switching Diodes
MA3Z080D, MA3Z080E
Silicon epitaxial planar type
For band switching
2.1 ± 0.1
1.25 ± 0.1
0.425 0.425
Unit : mm
Features
Low forward dynamic resistance r
Less voltage dependence of diode capacitance C
S-mini type package containing two elements, allowing
f
D
downsizing of equipment and automatic insertion through the taping package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature*T
Storage temperature T
R
F
opr
stg
Note) * : Maximum ambient temperature during operation
35 V
100 mA
25 to +85 °C
55 to +150 °C
1
0.650.65
1.3 ± 0.1
2.0 ± 0.2
2
0.9 ± 0.1
Flat S-Mini Type Package (3-pin)
Marking Symbol
MA3Z080D : M1X
MA3Z080E : M1Y
Internal Connection
1
3
2
DE
1
2
0
+ 0.1
0.3
3
0.05
+ 0.1
0.15
1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2
EIAJ : SC-70
3
Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f
Note) 1.Each characteristic is a standard for individual diodes
2.Rated input/output frequency: 100 MHz
3*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 33 V 0.01 100 nA
IF = 100 mA 0.92 1.0 V
F
VR = 6 V, f = 1 MHz 0.9 1.2 pF
D
IF = 2 mA, f = 100 MHz 0.65 0.85
1
MA3Z080D, MA3Z080E
Band Switching Diodes
IF V
1 000
)
100
mA (
F
10
1
Forward current I
0.1 0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
I
rf
1.0
)
(
0.8
f
0.6
F
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
10
CD V
5
) pF
3
(
D
2
1
0.5
0.3
Diode capacitance C
0.2
0.1 0 8 16 24 324 1220283640
R
f = 1 MHz T
Reverse voltage VR (V
rf f
1.0
)
(
0.8
f
0.6
IF = 2 mA T
= 25°C
a
)
= 25°C
a
IR T
100
)
10
nA (
R
1
0.1
Reverse current I
0.01 0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
a
VR = 33 V
)
0.4
0.2
Forward dynamic resistance r
0
1103 30 100
Forward current IF (mA
0.4
0.2
Forward dynamic resistance r
0
)
10 10030 300 1 000
Frequency f (MHz
)
2
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