Panasonic MA3Z070 Datasheet
Band Switching Diodes
MA3Z070
Silicon epitaxial planar type
For a band selection switch of an electronic tuner
■ Features
•
Low forward dynamic resistance r
•
Less voltage dependence of diode capacitance C
•
S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature*T
Storage temperature T
Note) * : Maximum ambient temperature during operation
f
R
F
−25 to +85 °C
opr
−55 to +150 °C
stg
D
35 V
100 mA
2.1 ± 0.1
1.25 ± 0.1 0.4250.425
1
1.3 ± 0.10.9 ± 0.1
2.0 ± 0.2
0.650.2 0.65
2
0.7 ± 0.1
1 : Anode 1
2 : Cathode 2
3 : Anode 2
Cathode 1
S-Mini Type Package (3-pin)
Marking Symbol: M3S
0.2 ± 0.1
0 to 0.1
EIAL : SC-70
3
Unit : mm
− 0
+ 0.1
0.3
− 0.05
+ 0.1
0.15
Internal Connection
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f
Note) 1．Each characteristic is a standard for individual diodes
2．Rated input/output frequency: 100 MHz
3．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 33 V 0.01 100 nA
IF = 100 mA 0.92 1.0 V
F
VR = 6 V, f = 1 MHz 0.9 1.2 pF
D
IF = 2 mA, f = 100 MHz 0.65 0.85 Ω
1
3
2
1
MA3Z070
Band Switching Diodes
IF V
3
10
)
2
10
mA
(
F
10
1
Forward current I
−1
10
0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
I
rf
1.0
)
Ω
(
0.8
f
0.6
F
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
10
CD V
5
)
pF
3
(
D
2
1
0.5
0.3
Diode capacitance C
0.2
0.1
0 8 16 24 324 1220283640
R
f = 1 MHz
= 25°C
T
a
Reverse voltage VR (V
rf f
1.0
)
Ω
(
0.8
f
0.6
IF = 2 mA
T
a
)
= 25°C
2
10
)
10
nA
(
R
1
−1
10
Reverse current I
−2
10
0 40 80 120 16020 60 100 140
IR T
Ambient temperature Ta (°C
a
VR = 33 V
)
0.4
0.2
Forward dynamic resistance r
0
1103 30 100
Forward current IF (mA
0.4
0.2
Forward dynamic resistance r
0
)
10 10030 300 1 000
Frequency f (MHz
)
2
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