Panasonic MA3XD17 Datasheet
Schottky Barrier Diodes (SBD)
MA3XD17
Silicon epitaxial planar type
For rectification
For protection against reverse current
Unit : mm
+ 0.2
− 0.3
2.8
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
■ Features
•
Mini type 3-pin package
•
High breakdown voltage V
= 100 V
R
+ 0.2
− 0.05
2.9
1
0.950.95
1.9 ± 0.2
2
1.45
3
+ 0.1
− 0.05
0.4
■ Absolute Maximum Ratings Ta = 25°C
− 0.06
0 to 0.1
+ 0.1
0.16
1 : Anode
2 : NC
3 : Cathode
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Non-repetitive peak forward I
surge current
*
Average forward current I
Junction temperature T
Storage temperature T
R
RM
FSM
F(AV)
j
stg
100 V
100 V
1.5 A
300 mA
125 °C
−55 to +150 °C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
Mini Type Package (3-pin)
Marking Symbol: M5K
Internal Connection
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
1. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
VR = 100 V 200 µA
IF = 300 mA 0.50 0.58 V
F
VR = 0 V, f = 1 MHz 100 pF
t
IF = IR = 100 mA 7 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
t
R
1
MA3XD17
Schottky Barrier Diodes (SBD)
IF V
10
1
)
A
(
10
F
10
10
Ta = 125°C
−1
−2
−3
F
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
75°C 25°C
− 20°C
)
IR V
1
−1
10
)
A
(
−2
10
R
−3
10
−4
10
R
Ta = 125°C
Reverse current I
−5
10
−6
10
0 20406080100120
Reverse voltage VR (V
75°C
25°C
)
Ct V
100
)
80
pF
(
t
60
40
20
Terminal capacitance C
0
0 20406080100120
R
Reverse voltage VR (V
)
2
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