Panasonic MA3XD15 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3XD15
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Low forward voltage: VF < 0.45 V
• Small reverse current: I
• Forward current (Average) I
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Non-repetitive peak forward I
surge current
Forward current (Average)
Junction temperature T
Storage temperature T
Note)*1: Mounted on an alumina PC board
*2
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
< 100 µA
R
F(AV)
1
*
= 1 A rectification is possible
20 V
25 V
3A
1.0 A
125 °C
−55 to +125 °C
I
F(AV)
R
RRM
FSM
j
stg
Unit: mm
+0.10
0.40
10˚
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
1.1
1.1
0 to 0.1
+0.10
0.16
–0.06
5˚
–0.1
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M5N
Internal Connection
3
0.4±0.2
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
Publication date: April 2004 SKH00093CED
IF = 1.0 A 0.45 V
VR = 20 V 100 µA
VR = 0 V, f = 1 MHz 120 pF
t
1
MA3XD15
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
1
)
A
(
F
−1
10
−2
10
Forward current I
−3
10
−4
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
Forward voltage VF (V
IR V
−2
10
−3
10
)
A
(
R
−4
10
−5
10
R
200
)
160
pF
(
t
120
80
Ct V
R
Reverse current I
−6
10
−7
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
Terminal capacitance C
40
0
0 4 8 121620
Reverse voltage VR (V
)
2
SKH00093CED
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