Panasonic MA3XD15 Datasheet
Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
For rectification
For protection against reverse current
+ 0.2
− 0.3
2.8
+ 0.25
1.5
− 0.050.65 ± 0.15 0.65 ± 0.15
Unit : mm
■ Features
•
Mini type 3-pin package
•
Low V
or Low IR type: VF < 0.45 V, IR < 100 µA
•
F
Allowing to rectify under (I
= 1 A) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Non-repetitive peak forward I
1
surge current
Average forward current
*
2
*
Junction temperature T
Storage temperature T
V
I
F(AV)
R
RRM
FSM
j
−55 to +125 °C
stg
125 °C
20 V
25 V
3A
1.0 A
1
0.950.95
+ 0.2
− 0.05
2.9
1.9 ± 0.2
2
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
Mini Type Package (3-pin)
Marking Symbol: M5N
Internal Connection
0 to 0.1
1.45
3
+ 0.1
− 0.05
0.4
+ 0.1
− 0.06
0.16
1 : Anode
2 : NC
3 : Cathode
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2: With a alumina PC board
1
3
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
VR = 20 V 100 µA
IF = 1.0 A 0.45 V
F
VR = 0 V, f = 1 MHz 120 pF
t
1
MA3XD15
Schottky Barrier Diodes (SBD)
IF V
10
1
)
A
(
F
−1
10
−2
10
Forward current I
−3
10
−4
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
Forward voltage VF (V
IR V
−2
10
−3
10
)
A
(
R
−4
10
−5
10
Reverse current I
−6
10
−7
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
R
200
)
160
pF
(
t
120
80
40
Terminal capacitance C
0
0 4 8 121620
)
Ct V
R
Reverse voltage VR (V
)
2
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