Panasonic MA3XD14E Datasheet

Schottky Barrier Diodes (SBD)

MA3XD14E

Silicon epitaxial planar type (cathode common)

For high-speed switching circuits

■ Features

•

Mini type 3-pin package

•

Low forward rise voltage V

•

Cathode common type

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Non-repetitive peak forward I

surge current

Forward current

(DC)

Peak forward

current

Junction temperature T

Storage temperature T

Note) *1: The value for operating one chip

2

*

Single I

Double

Single I

Double

*2: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

(VF < 0.4 V)

F

1

*

1

*

R

V

RRM

FSM

F

20 V

20 V

1A

100 mA

70

FM

j

stg

300 mA

200

125 °C

−55 to +125 °C

Marking Symbol: M5H

Internal Connection

− 0.05

+ 0.2

2.9

1.9 ± 0.2

− 0.1

+ 0.2

1.1

0.1 to 0.3

0.4 ± 0.2

1

2

+ 0.2

2.8

− 0.3

+ 0.25

1.5

− 0.050.65 ± 0.15 0.65 ± 0.15

1

0.950.95

2

0.8

0 to 0.1

Mini Type Package (3-pin)

1.45

3

+ 0.1

+ 0.1

1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2

3

Unit : mm

− 0.05

0.4

− 0.06

0.16

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

R

F1

V

F2

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

  2. Rated input/output frequency: 250 MHz

3. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 10 V 20 µA

IF = 5 mA 0.27 V

IF = 100 mA 0.40 V

VR = 0 V, f = 1 MHz 25 pF

t

IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

t

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

rr

I

= 10 mA

rr

t

I

F

1

MA3XD14E

Schottky Barrier Diodes (SBD)

IF  V

1

−1

10

Ta = 125°C

)

A

(

−2

10

F

−3

10

−4

10

F

75°C

25°C

20°C

Forward current I

−5

10

−6

10

0 0.1 0.2 0.3 0.4 0.5 0.6

Forward voltage VF (V

IR  V

−1

10

−2

10

)
A

(

R

−3

10

−4

10

Reverse current I

−5

10

−6

10

)

Ta = 125°C

0 5 10 15 20 25 30

Reverse voltage VR (V

R

75°C

25°C

)

2