Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3XD11
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
• Low forward voltage V
■ Absolute Maximum Ratings Ta = 25°C
= 1 A rectification is possible
F(AV)
F
10˚
0.40
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
Unit: mm
+0.10
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.10
0.16
–0.06
5˚
0.4±0.2
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
1
Forward current (Average)
Non-repetitive peak forward I
surge current
2
*
*
Junction temperature T
Storage temperature T
I
F(AV)
R
RRM
FSM
j
stg
Note)*1: Mounted on an alumina PC board
2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
20 V
25 V
1.0 A
3A
125 °C
−55 to +125 °C
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M6K
Internal Connection
+0.2
–0.1
+0.3
–0.1
1.1
1.1
0 to 0.1
3
12
1: Anode
2: N.C.
3: Cathode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
R
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
IF = 1.0 A 0.45 V
F
VR = 20 V 200 µA
VR = 0 V, f = 1 MHz 180 pF
t
Publication date: April 2004 SKH00091CED
1
MA3XD11
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
10
Ta = 125°C
1
)
−1
A
10
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
−6
10
0 0.2 0.4 0.6 0.8 1.0 1.2
75°C
−20°C
F
25°C
Forward voltage VF (V
IR T
a
)
mA
(
R
2
10
10
1
)
VR = 20 V
10 V
5 V
IR V
−1
10
−2
10
)
A
(
−3
10
R
−4
10
−5
10
R
Ta = 125°C
75°C
25°C
Reverse current I
−6
10
−7
10
0102030
Reverse voltage VR (V
)
1.0
VF T
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
a
IF = 1 A
100 mA
10 mA
)
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
Ambient temperature Ta
(°C)
2
SKH00091CED