Panasonic MA3XD11 Datasheet

Schottky Barrier Diodes (SBD)

MA3XD11

Silicon epitaxial planar type

For high-frequency rectification

■ Features

•

Sealed in the Mini type 3-pin package

•

Allowing to rectify under (I

•

Low forward rise voltage V

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

1

Average forward current

Non-repetitive peak forward I

2

surge current

*

Junction temperature T

Storage temperature T

Note) *1: With a alumina PC board

*2: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

*

= 1 A) condition

F(AV)

F

R

V

RRM

I

F(AV)

FSM

j

stg

125 °C

−55 to +125 °C

20 V

25 V

1.0 A

3A

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

0.950.95

+ 0.2

− 0.05

2.9

1.9 ± 0.2

+ 0.2

− 0.1

0.8

1.1

0.1 to 0.3

0.4 ± 0.2

− 0.05

1

2

Mini Type Package (3-pin)

Marking Symbol: M6K

Internal Connection

1

2

0 to 0.1

3

Unit : mm

1.45

3

+ 0.1

+ 0.1

1 : Anode
2 : NC
3 : Cathode

− 0.05

0.4

− 0.06

0.16

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R

Forward voltage (DC) V

Terminal capacitance C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of

a human body and the leakage of current from the operating equipment

2. Rated input/output frequency: 400 MHz

VR = 20 V 200 µA

I

F

t

= 1.0 A 0.45 V

F

VR = 0 V, f = 1 MHz 180 pF

1

MA3XD11

Schottky Barrier Diodes (SBD)

IF  V

10

Ta = 125°C

1

)
A

−1

(

10

F

−2

10

−3

10

Forward current I

−4

10

−5

10

−6

10

0 0.2 0.4 0.6 0.8 1 1.2

25°C

− 20°C

F

75°C

Forward voltage VF (V

IR  T

a

)

mA
(

R

100

10

1

)

VR = 20 V

10 V

5 V

1.0

VF  T

0.8

)
V

(

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

IR  V

a

IF = 1 A

−1

10

−2

10

)
A

(

−3

10

R

−4

10

−5

10

R

Ta = 125°C

75°C

25°C

Reverse current I

−6

100 mA

10 mA

)

10

−7

10

0 5 10 15 20 25 30

Reverse voltage VR (V

)

0.1

Reverse current I

0.01

0.001

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2