Panasonic MA3XD11 Datasheet

Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
For high-frequency rectification
Features
Sealed in the Mini type 3-pin package
Low forward rise voltage V
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
1
Average forward current
Non-repetitive peak forward I
2
surge current
*
Junction temperature T
Storage temperature T
Note) *1: With a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*
= 1 A) condition
F(AV)
F
R
V
RRM
I
F(AV)
FSM
j
stg
125 °C
55 to +125 °C
20 V
25 V
1.0 A
3A
+ 0.2
2.8
0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
0.950.95
+ 0.2
0.05
2.9
1.9 ± 0.2
+ 0.2
0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
0.05
1
2
Mini Type Package (3-pin)
Marking Symbol: M6K
Internal Connection
1
2
0 to 0.1
3
Unit : mm
1.45
3
+ 0.1
+ 0.1
1 : Anode 2 : NC 3 : Cathode
0.05
0.4
0.06
0.16
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 400 MHz
VR = 20 V 200 µA
I
F
t
= 1.0 A 0.45 V
F
VR = 0 V, f = 1 MHz 180 pF
1
MA3XD11
Schottky Barrier Diodes (SBD)
IF V
10
Ta = 125°C
1
) A
1
(
10
F
2
10
3
10
Forward current I
4
10
5
10
6
10
0 0.2 0.4 0.6 0.8 1 1.2
25°C
20°C
F
75°C
Forward voltage VF (V
IR T
a
)
mA (
R
100
10
1
)
VR = 20 V
10 V
5 V
1.0
VF T
0.8
) V
(
F
0.6
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160
Ambient temperature Ta (°C
IR V
a
IF = 1 A
1
10
2
10
) A
(
3
10
R
4
10
5
10
R
Ta = 125°C
75°C
25°C
Reverse current I
6
100 mA
10 mA
)
10
7
10
0 5 10 15 20 25 30
Reverse voltage VR (V
)
0.1
Reverse current I
0.01
0.001
40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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