Panasonic MA3X791 Datasheet
Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
■ Features
•
Two MA3X786s are contained in one package (series connection)
•
Allowing to rectify under (I
•
Optimum for high-frequency rectification because of its short reverse recovery time (t
•
Low V
(forward rise voltage), with high rectification efficiency
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward
current
Average forward
current
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) *1:
The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2: Value per chip
Single I
Series
Single I
Series
1
*
2
*
2
*
= 100 mA) condition
F(AV)
R
V
RRM
FM
30 V
30 V
300 mA
200
F(AV)
100 mA
70
FSM
j
stg
1A
125 °C
−55 to +125 °C
2.8
0.950.95
0.8
1.5
1
2
0.65 ± 0.15 0.65 ± 0.15
− 0.05
+ 0.2
2.9
1.9 ± 0.2
− 0.1
+ 0.2
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Mini Type Package (3-pin)
Marking Symbol: M4A
Internal Connection
1
2
+ 0.2
− 0.3
+ 0.25
− 0.05
3
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59
3
Unit : mm
1.45
− 0.05
+ 0.1
0.4
− 0.06
+ 0.1
0.16
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Pulse Generator
(PG-10N)
R
Bias Application Unit N-50BU
A
= 50 Ω
s
VR = 30 V 15 µA
IF = 100 mA 0.55 V
F
VR = 0 V, f = 1 MHz 20 pF
t
IF = IR = 100 mA 2 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA3X791
Schottky Barrier Diodes (SBD)
IF V
− 20°C
F
75°C
25°C
1
−1
10
)
A
(
Ta = 125°C
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR T
10 000
1 000
)
µA
(
R
100
10
Reverse current I
1
0.1
−40 0 40 80 120 160 200
a
VR = 30 V
3 V
1 V
Ambient temperature Ta (°C
VF T
Ct V
a
IF = 100 mA
10 mA
3 mA
)
R
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
30
25
)
pF
(
t
20
15
10
Terminal capacitance C
5
0
0 5 10 15 20 25 30
Reverse voltage VR (V
−2
10
−3
10
)
A
(
R
−4
10
−5
10
Reverse current I
−6
10
−7
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03 30
IR V
R
Ta = 125°C
Reverse voltage VR (V
I
t
F(surge)
0.1 1 1030.3
W
Ta = 25°C
t
Pulse width tW (ms
75°C
25°C
)
I
F(surge)
W
)
2
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