Panasonic MA3X788 Datasheet
Schottky Barrier Diodes (SBD)
MA3X788
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
+ 0.2
2.8
− 0.3
+ 0.25
− 0.05
0.65 ± 0.15 0.65 ± 0.15
1.5
Unit : mm
■ Features
•
Allowing to rectify under (I
•
Reverse voltage V
(DC value) = 60 V guaranteed
R
= 200 mA) condition
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward current I
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FM
FSM
j
−55 to +125 °C
stg
300 mA
200 mA
125 °C
60 V
60 V
1A
1
0.950.95
− 0.05
+ 0.2
2.9
1.9 ± 0.2
2
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M3V
Internal Connection
1.45
3
− 0.05
+ 0.1
0.4
− 0.06
+ 0.1
0.16
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring circuit
VR = 50 V 50 µA
IF = 200 mA 0.65 V
F
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA3X788
Schottky Barrier Diodes (SBD)
IF V
3
10
Ta = 150°C
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
− 20°C
F
100°C
25°C
Forward voltage VF (V
Ct V
30
25
)
pF
(
t
20
15
10
Terminal capacitance C
5
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
IF = 200 mA
Ambient temperature Ta (°C
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
a
VR = 30 V
5 V
100 mA
10 mA
IR V
4
10
Ta = 150°C
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 102030405060
)
Reverse voltage VR (V
R
75°C
25°C
)
0
0 102030405060
Reverse voltage VR (V
2
−1
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
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