Panasonic MA3X740 Datasheet

Schottky Barrier Diodes (SBD)

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65 ± 0.15 0.65 ± 0.15

3

1

2

0.950.95

1.9 ± 0.2

0.4

+ 0.1

− 0.05

1.1

+ 0.2

− 0.1

0.8

0.4 ± 0.2

0 to 0.1

0.16

+ 0.1

− 0.06

1.45

0.1 to 0.3

2.9

+ 0.2

− 0.05

MA3X740

Silicon epitaxial planar type

For super high speed switching circuit

For small current rectification

■ Features

•

Two MA3X721s are contained in one package (series connec­tion)

•

Allowing to rectify under (I
(single diode value)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

Average forward

current

Peak forward

current

Non-repetitive peak

forward surge current

Junction temperature T

Storage temperature T

Note) *1: Value per chip

*2: The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

  2. Rated input/output frequency: 1 000 MHz

3. * : trr measuring instrument

Pulse Generator
(PG-10N)

= 50 Ω

R

s

= 200 mA) condition

F(AV)

R

V

RRM

Single I

Double

Single I

Double

Single I

2

*

Double

*

F(AV)

1

*

  130

FM

1

*

  220

FSM

1

*

  0.7

j

stg

Bias Application Unit N-50BU

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

30 V

30 V

200 mA

300 mA

1A

150 °C

−55 to +150 °C

R

t

rr

VR = 30 V 50 µA

IF = 200 mA 0.55 V

F

VR = 0 V, f = 1 MHz 30 pF

t

IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω

V

R

Marking Symbol: M3C

Internal Connection

Input Pulse Output Pulse

t

t

p

r

10%

90%

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

I

F

= 100 mA

I

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 10 mA

rr

1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2

Mini Type Package (3-pin)

1

2

t

Unit : mm

JEDEC : TO-236
EIAJ : SC-59

3

1

MA3X740

Schottky Barrier Diodes (SBD)

IF  V

3

10

2

10

Ta = 150°C

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

0 0.1 0.2 0.3 0.4 0.5 0.6

F

100°C 25°C

Forward voltage VF (V

Ct  V

32

28

)
pF

24

(

t

20

16

12

R

− 20°C

)

f = 1 MHz

= 25°C

T

a

VF  T

0.5

0.4

)
V

(

F

0.3

0.2

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

a

IF = 200 mA

Ambient temperature Ta (°C

IR  T

5

10

4

10

)
µA

(

R

3

10

2

10

a

VR = 30 V

100 mA

1 mA

10 V
5 V

IR  V

5

10

4

10

R

Ta = 150°C

)
µA

(

3

10

R

2

10

10

Reverse current I

1

−1

10

0 5 10 15 20 25 30

)

Reverse voltage VR (V

100°C

25°C

)

8

Terminal capacitance C

4

0

0 5 10 15 20 25 30

Reverse voltage VR (V

Reverse current I

10

1

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2