Panasonic MA3X740 Datasheet
Schottky Barrier Diodes (SBD)
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
0.65 ± 0.15 0.65 ± 0.15
3
1
2
0.950.95
1.9 ± 0.2
0.4
+ 0.1
− 0.05
1.1
+ 0.2
− 0.1
0.8
0.4 ± 0.2
0 to 0.1
0.16
+ 0.1
− 0.06
1.45
0.1 to 0.3
2.9
+ 0.2
− 0.05
MA3X740
Silicon epitaxial planar type
For super high speed switching circuit
For small current rectification
■ Features
•
Two MA3X721s are contained in one package (series connection)
•
Allowing to rectify under (I
(single diode value)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward
current
Peak forward
current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Pulse Generator
(PG-10N)
= 50 Ω
R
s
= 200 mA) condition
F(AV)
R
V
RRM
Single I
Double
Single I
Double
Single I
2
*
Double
*
F(AV)
1
*
130
FM
1
*
220
FSM
1
*
0.7
j
stg
Bias Application Unit N-50BU
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
30 V
30 V
200 mA
300 mA
1A
150 °C
−55 to +150 °C
R
t
rr
VR = 30 V 50 µA
IF = 200 mA 0.55 V
F
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
V
R
Marking Symbol: M3C
Internal Connection
Input Pulse Output Pulse
t
t
p
r
10%
90%
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
Mini Type Package (3-pin)
1
2
t
Unit : mm
JEDEC : TO-236
EIAJ : SC-59
3
1
MA3X740
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
Ta = 150°C
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
100°C 25°C
Forward voltage VF (V
Ct V
32
28
)
pF
24
(
t
20
16
12
R
− 20°C
)
f = 1 MHz
= 25°C
T
a
VF T
0.5
0.4
)
V
(
F
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
a
IF = 200 mA
Ambient temperature Ta (°C
IR T
5
10
4
10
)
µA
(
R
3
10
2
10
a
VR = 30 V
100 mA
1 mA
10 V
5 V
IR V
5
10
4
10
R
Ta = 150°C
)
µA
(
3
10
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
100°C
25°C
)
8
Terminal capacitance C
4
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Reverse current I
10
1
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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