Panasonic MA3X730 Datasheet

Schottky Barrier Diodes (SBD)

MA3X730

Silicon epitaxial planar type

For UHF mixer

Unit : mm

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

− 0.05

■ Features

•

Two MA2X707s are contained in the (Mini (3-pin) type)

•

Large conversion gain (GC)

•

Small forward voltage V

•

Optimum for the UHF band mixer

F

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Forward voltage (DC) V

Reverse voltage (DC) V

Junction temperature T

Storage temperature T

F

R

j

stg

0.5 V

5V

125 °C

−55 to +125 °C

+ 0.2

− 0.05

2.9

1.9 ± 0.2

− 0.1

+ 0.2

1.1

0.1 to 0.3

0.4 ± 0.2

1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2

1

0.950.95

2

0.8

0 to 0.1

Mini Type Package (3-pin)

1.45

3

− 0.05

+ 0.1

0.4

− 0.06

+ 0.1

0.16

JEDEC : TO-236
EIAJ : SC-59

Marking Symbol: M2X

Internal Connection

1

3

2

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Forward current (DC) I

Reverse current (DC) I

F

R

Forward voltage (DC) V

Reverse breakdown voltage (DC) V

(BR)R

Terminal capacitance C

1,2

Conversion gain

*

GC RF = 890 MHz, LO = 935 MHz −7 −5dB

Static breakdown strength C = 100 pF, Breakdown judgment 100 200 V

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 935 MHz

3. Noise index is 8.5 dB

4. Each characteristic is a standard for individual diodes

5. *1: Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.

*2: Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed

VF = 0.5 V 35 100 mA

VR = 5 V 35 µA

IF = 2 mA 0.25 V

F

IR = 1 mA 5 V

VR = 0.5 V, f = 1 MHz 0.65 0.85 1.05 pF

t

IF = 45 MHz

point IR ≥ 35 µA

1

MA3X730

Schottky Barrier Diodes (SBD)

IF  V

100

)

10

mA
(

F

1

0.1

Forward current I

0.01
0 0.2 0.4 0.6 0.8 1.0

F

Forward voltage VF (V

Ta = 25°C

)

IR  V

100

)

10

µA
(

R

1

0.1

Reverse current I

0.01
012345

R

Ta = 25°C

Reverse voltage VR (V

Ct  V

100

)
pF

10

(

t

1

0.1

Terminal capacitance C

0.01

0.01

)

0.1 1 10

Reverse voltage VR (V

R

f = 1 MHz
T

= 25°C

a

)

2