Panasonic MA3X717E, MA3X717D Datasheet
Schottky Barrier Diodes (SBD)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
MA3X717D, MA3X717E
Silicon epitaxial planar type
For switching circuits
+ 0.2
2.8
− 0.3
+ 0.25
1.5
− 0.050.65 ± 0.15 0.65 ± 0.15
Unit : mm
■ Features
•
Two MA3X717s are contained in one package
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
•
Optimum for high-frequency rectification because of its short reverse recovery time (t
) (Low VF type of MA3X704D/E)
F
)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current
(DC)
Peak forward
current
Single I
Double* 20
Single I
Double* 110
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
−55 to +125 °C
Note) * : Value per chip
■ Electrical Characteristics Ta = 25°C
+ 0.2
− 0.05
2.9
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
•
MA3X717D : M3E
•
MA3X717E : M3D
Internal Connection
1
2
1.9 ± 0.2
+ 0.2
− 0.1
1.1
0.1 to 0.3
0.4 ± 0.2
0.950.95
0.8
1
2
0 to 0.1
1.45
3
+ 0.1
− 0.05
0.4
+ 0.1
− 0.06
0.16
MA3X717D MA3X717E
1 Cathode Anode
2 Cathode Anode
3 Anode Cathode
1
3
3
2
DE
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
R
F1
V
F2
t
rr
VR = 30 V 30 µA
IF = 1 mA 0.3 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency η Vin = 3 V
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
1
MA3X717D, MA3X717E
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
Ta = 125°C
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.4 0.8 1.2 1.6 2.0 2.4
F
75°C 25°C
− 20°C
Forward voltage VF (V
Ct V
3.2
2.8
)
pF
2.4
(
t
2.0
1.6
1.2
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
a
Ambient temperature Ta (°C
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
VR = 30 V
3 V
1 V
IF = 30 mA
10 mA
1 mA
IR V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
0.8
Terminal capacitance C
0.4
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Reverse current I
1
−1
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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