Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X704D (MA704WA), MA3X704E (MA704WK)
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two MA3X704A (MA704A) is contained in one package
• Low forward voltage V
• Small temperature coefficient of forward characteristic
• Small reverse current I
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Peak forward current
and good wave detection efficiency η
F
R
30 V
30 V
150 mA
Single I
R
V
RM
FM
+0.10
0.40
–0.05
3
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
EIAJ: SC-59
Mini3-G1 Package
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
MA3X704D MA3X704E
0 to 0.1
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
Marking Symbol
• MA3X704D: M2P • MA3X704E: M2R
Unit: mm
+0.10
0.16
–0.06
5˚
0.4±0.2
Double 110
Forward current Single I
Double 20
Junction temperature T
Storage temperature T
F
j
−55 to +125 °C
stg
30 mA
125 °C
Internal Connection
3
12
D
3
12
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*: t
measurement circuit
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
i
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 1 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
IN
= 3 V
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
= 50 Ω
r
10%
V
R
t
t
δ = 0.05
Note) The part numbers in the parenthesis show conventional part number.
90%
= 2 µs
p
= 0.35 ns
r
t
t
rr
I
F
I
F
I
R
R
L
= 10 mA
= 10 mA
= 100 Ω
I
rr
= 1 mA
t
Publication date: April 2004 SKH00074CED
1
MA3X704D, MA3X704E
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
= 125°C
F
75°C 25°C
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
T
a
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
a
V
3 V
1 V
−20°C
)
= 30 V
R
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ct V
3
)
pF
(
t
2
1
R
Terminal capacitance C
= 125°C
T
a
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
a
I
10 mA
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
1 mA
Ambient temperature Ta (°C
= 30 mA
F
)
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
SKH00074CED