Panasonic MA3X704E, MA3X704D Datasheet
Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
+ 0.2
− 0.3
2.8
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
Unit : mm
■ Features
•
Two MA3X704As are contained in one package
•
Low forward rise voltage (V
) and satisfactory wave detection
F
1
0.950.95
− 0.05
+ 0.2
1.9 ± 0.2
2.9
2
1.45
3
− 0.05
+ 0.1
0.4
efficiency (η)
•
Small tmperature coefficient of forward characteristic
•
Extremely low reverse current I
R
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC)
Peak forward
current
Forward current
(DC)
Junction temperature T
Storage temperature T
Note) * : Value per chip
MA3X704D/E
Single I
*
Double
Single I
*
Double
V
R
FM
30 V
150 mA
110
F
30 mA
20
j
stg
125 °C
−55 to +125 °C
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3pin)
MA3X704D MA3X704E
1 Cathode Anode
2 Cathode Anode
3 Anode Cathode
Marking Symbol
• MA3X704D : M2P • MA3X704E : M2R
Internal Connection
1
2
1
3
2
+ 0.1
− 0.06
0.16
3
DE
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1.0 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
V
R
10%
90%
t
= 2 µs
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
MA3X704D, MA3X704E
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Ta = 125°C − 20°C
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C 25°C
Forward voltage VF (V
Ct V
3
)
pF
(
t
2
R
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
a
IF = 30 mA
10 mA
1 mA
Ambient temperature Ta (°C
IR T
3
10
2
10
)
µA
(
R
10
a
V
3 V
1 V
= 30 V
R
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
)
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
1
Terminal capacitance C
0
0 5 10 15 20 25 30
Reverse voltage VR (V
1
Reverse current I
−1
10
−2
10
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
)
2
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