Panasonic MA3X704A, MA3X704, MA704 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X704 (MA704), MA3X704A (MA704A)
Silicon epitaxial planar type
Unit: mm
For switching
For wave detection
■ Features
• Low forward voltage VF and good wave detection efficiency η
• Small temperature coefficient of forward characteristic
• Small reverse current I
R
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
Maximum peak
reverse voltage
Peak forward current
Forward current I
Junction temperature T
Storage temperature T
MA3X704 V
MA3X704A
MA3X704 V
MA3X704A
R
15 V
30
RM
15 V
30
I
FM
F
j
stg
150 mA
30 mA
125 °C
−55 to +125 °C
(0.95) (0.95)
10˚
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol
• MA3X704: M1K • MA3X704A: M1L
Internal Connection
1
2.90
+0.10
0.40
–0.05
3
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
1.9
±0.1
+0.20
–0.05
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.3
–0.1
1.1
5˚
0.16
+0.10
–0.06
1: Anode
2: N.C.
3: Cathode
3
0.4±0.2
■ Electrical Characteristics Ta = 25°C ± 3°C
12
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current MA3X704 I
F1
V
F2
R
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 15 V 200 nA
MA3X704A VR = 30 V 300
Terminal capacitance C
Reverse recovery time
*
t
rr
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency η VIN = 3 V
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*:t
measurement circuit
rr
Publication date: April 2004 SKH00073CED
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Input Pulse Output Pulse
t
t
p
r
V
R
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Note) The part numbers in the parenthesis show conventional part number.
10%
90%
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
rr
I
F
I
I
R
= 10 mA
F
= 10 mA
R
= 100 Ω
L
I
rr
= 1 mA
t
1
MA3X704, MA3X704A
This product complies with the RoHS Directive (EU 2002/95/EC).
Common characteristics charts
IF V
= 125°C
a
F
75°C 25°C
−20°C
)
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
T
Forward voltage VF (V
Characteristics charts of MA3X704
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
R
= 125°C
T
a
75°C
25°C
VF T
1.0
0.8
)
V
(
F
0.6
0.4
a
I
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
IR T
2
10
)
10
µA
(
R
1
−1
Reverse current I
10
a
= 30 mA
F
= 15 V
V
R
7.5 V
10 mA
1 mA
)
3
Ct V
)
pF
(
t
2
1
Terminal capacitance C
R
f = 1 MHz
= 25°C
T
a
−2
10
0 5 10 15 20 25 30
Reverse voltage VR (V
)
−2
10
−40 0 40 80 120 160 200
Characteristics charts of MA3X704A
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
T
a
= 125°C
75°C
25°C
)
2
10
)
10
µA
(
R
1
−1
Reverse current I
10
−2
10
−40 0 40 80 120 160 200
2
Ambient temperature Ta (°C
IR T
a
= 30 V
V
R
15 V
Ambient temperature Ta (°C
SKH00073CED
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
3
)
pF
(
t
2
1
Ct V
R
)
f = 1 MHz
= 25°C
T
a
Terminal capacitance C
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
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