Panasonic MA3X704A, MA3X704 Datasheet
Schottky Barrier Diodes (SBD)
MA3X704, MA3X704A
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
+ 0.2
2.8
− 0.3
+ 0.25
0.65 ± 0.15 0.65 ± 0.15
1.5
− 0.05
Unit : mm
■ Features
•
Low forward rise voltage (V
) and satisfactory wave detection
F
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
R
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage
(DC)
Peak reverse
voltage
MA3X704
MA3X704A
MA3X704
MA3X704A
Peak forward current I
Forward current (DC) I
Junction temperature T
Storage temperature T
V
R
15 V
30
V
RM
15 V
30
FM
F
j
stg
150 mA
30 mA
125 °C
−55 to +125 °C
1
0.950.95
+ 0.2
− 0.05
2.9
1.9 ± 0.2
2
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
• MA3X704 : M1K • MA3X704A : M1L
Internal Connection
1
0 to 0.1
3
1.45
3
+ 0.1
− 0.05
0.4
+ 0.1
− 0.06
0.16
2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
*
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
MA3X704
MA3X704A
I
R
F1
V
F2
t
t
rr
Input Pulse Output Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
VR = 15 V 200 nA
VR = 30 V 300
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
t
rr
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
I
= 1 mA
rr
t
1
MA3X704, MA3X704A
Common characteristics charts
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125°C
Forward voltage VF (V
F
75°C 25°C
− 20°C
)
Characteristics charts of MA3X704
V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
R
Ta = 125°C
75°C
25°C
VF T
1.0
0.9
0.8
)
V
(
0.7
F
0.6
0.5
0.4
0.3
Forward voltage V
0.2
0.1
0
−40 0 40 80 120 160
a
IF = 30 mA
Ambient temperature Ta (°C
Ct V
3
)
pF
(
t
2
1
R IR
f = 1 MHz
T
Terminal capacitance C
10 mA
1 mA
= 25°C
a
)
IR T
2
10
)
10
µA
(
R
1
−1
10
Reverse current I
a
VR = 15 V
7.5 V
−2
10
0 5 10 15 20 25 30
Reverse voltage VR (V
)
Characteristics charts of MA3X704A
V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
Reverse voltage VR (V
R
Ta = 125°C
75°C
25°C
)
2
0
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
3
)
pF
(
t
2
1
R IR
Terminal capacitance C
0
0 5 10 15 20 25 30
Reverse voltage VR (V
)
f = 1 MHz
= 25°C
T
a
)
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
IR T
2
10
)
10
µA
(
R
1
−1
10
Reverse current I
−2
10
−40 0 40 80 120 160 200
a
Ambient temperature Ta (°C
VR = 30 V
15 V
)
)
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