Panasonic MA3X703 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X703 (MA10703)
Silicon epitaxial planar type
For high frequency rectification
Features
Forward current (Average) I
Small reverse current I
products)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
= 500 mA rectification is possible
(About 1/10 of IR of the ordinary
R
R
RRM
F(AV)
FSM
j
stg
20 V
20 V
500 mA
3A
125 °C
55 to +125 °C
Unit: mm
+0.10
0.40
10˚
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
0 to 0.1
0.16
+0.10 –0.06
1: Anode 2: N.C. 3: Cathode
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M4R
Internal Connection
3
0.4±0.2
Electrical Characteristics Ta = 25°C ± 3°C
12
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4.*:t
measurement circuit
rr
Bias Application Unit (N-50BU)
A
Pulse Generator (PG-10N)
= 50
R
s
Wave Form Analyzer (SAS-8130) R
= 50
i
IF = 500 mA 0.50 0.55 V
IF = 10 mA 0.30 0.40
VR = 10 V 10 µA
VR = 5 V 1
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns Irr = 0.1 IR, RL = 100
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t t δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100
R
L
t
rr
t
= 0.1 I
I
rr
R
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SKH00072CED
1
MA3X703
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
1
= 125°C
T
1
10
) A
(
F
2
10
3
10
Forward current I
4
10
5
10
a
0 0.2 0.4 0.6
F
20°C
Forward voltage VF (V
IR T
4
10
3
10
) µA
(
R
2
10
10
a
V
= 20 V
R
10 V 6 V 3 V
75°C 25°C
)
IR V
T
a
R
= 125°C
4
10
3
10
) µA
(
R
2
10
10
Reverse current I
1
1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
80
) pF
60
(
t
40
R
75°C
25°C
T
a
)
= 25°C
VF T
0.8
)
0.6
V (
F
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160 200
a
= 500 mA
I
F
50 mA
5 mA
Ambient temperature Ta (°C
I
t
10
) A
(
10
F(surge)
3
2
10
F(surge)
W
T
a
t
W
Breakdown point (
= 25°C
I
F(surge)
typ.
)
)
Reverse current I
1
1
10
40 0 40 80 120 160 200
Ambient temperature Ta (°C
20
Terminal capacitance C
1
Forward surge current I
0
0102030
)
Reverse voltage VR (V
)
1
10
1
10
Pulse width tW (ms
101
2
10
)
2
SKH00072CED
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