Panasonic MA3X703 Datasheet
Schottky Barrier Diodes (SBD)
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
0.65 ± 0.15 0.65 ± 0.15
3
1
2
0.950.95
1.9 ± 0.2
0.4
+ 0.1
− 0.05
1.1
+ 0.2
− 0.1
0.8
0.4 ± 0.2
0 to 0.1
0.16
+ 0.1
− 0.06
1.45
0.1 to 0.3
2.9
+ 0.2
− 0.05
MA3X703
Silicon epitaxial planar type
For high-frequency rectification
■ Features
•
Mini type 3-pin package
•
Allowing to rectify under (I
•
Low I
(reverse current) type. (About 1/10 of IR of the ordinary
R
products)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward current I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
*
(non-repetitive)
= 500 mA) condition
F(AV)
R
V
RRM
F(AV)
FSM
j
−55 to +125 °C
stg
20 V
20 V
500 mA
3A
125 °C
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M4R
Internal Connection
1
2
Unit : mm
JEDEC : TO-236
EIAJ : SC-59
3
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
R1
I
R2
F1
V
F2
*
t
rr
VR = 10 V 10 µA
VR = 5 V 1 µA
IF = 500 mA 0.5 0.55 V
IF = 10 mA 0.3 0.4 V
VR = 0 V, f = 1 MHz 60 pF
t
IF = IR = 100 mA 5 ns
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
R
= 50 Ω
s
A
W.F.Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
t
= 2 µs
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
rr
= 0.1·I
t
R
1
MA3X703
Schottky Barrier Diodes (SBD)
IF V
1
Ta = 125°C
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
IR T
10 000
1 000
)
µA
(
R
100
10
Reverse current I
1
0.1
−40 0 40 80 120 160 200
a
VR = 20 V
10 V
6 V
3 V
Ambient temperature Ta (°C
75°C
25°C
)
VF T
Ct V
a
IF = 500 mA
50 mA
5 mA
)
R
Ta = 25°C
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
80
70
)
pF
60
(
t
50
40
30
20
Terminal capacitance C
10
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
IR V
R
Ta = 125°C
Reverse voltage VR (V
I
t
F(surge)
0.3 3 30 100101
W
Ta = 25°C
Breakdown point (typ.)
Pulse width tW (ms
75°C
25°C
t
W
)
I
F(surge)
)
2
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