Panasonic MA3X701 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X701 (MA10701)
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
= 700 mA rectification is possible
F(AV)
R
RRM
F(AV)
FSM
j
stg
30 V
30 V
700 mA
5A
125 °C
−55 to +150 °C
Unit: mm
+0.10
0.40
10˚
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
1.1
1.1
0 to 0.1
+0.10
0.16
–0.06
5˚
–0.1
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M4P
Internal Connection
3
0.4±0.2
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
2
Reverse recovery time
*
Thermal resistace (j-a) R
R
t
th(j-a)1
th(j-a)2
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4.*1: Guaranteed on the condition of soldered to PC board. (Cu foil 0.8 mm × 20 mm)
: t
measurement circuit
*2
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
IZ = 700 mA 0.55 V
VR = 30 V 80 µA
VR = 0 V, f = 1 MHz 120 pF
t
IF = IR = 100 mA 7.5 ns
Irr = 10 mA, RL = 100 Ω
420 °C/W
1
*
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100 Ω
R
L
330 °C/W
t
rr
t
= 10 mA
I
rr
Publication date: April 2004 SKH00071CED
1
MA3X701
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
1
= 125°C
T
a
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.2 0.4 0.6
F
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
V
Reverse current I
1
75°C
25°C
= 30 V
R
15 V
6 V
IR V
Ct V
R
= 125°C
T
a
75°C
25°C
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
R
)
A
(
F(surge)
3
10
2
10
10
1
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
0 5 10 15 20 25 30
Reverse voltage VR (V
300
)
pF
(
t
200
100
Terminal capacitance C
VF T
a
= 700 mA
I
F
100 mA
10 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
T
a
t
W
= 25°C
I
)
F(surge)
Forward surge current I
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta
2
(°C)
0
0102030
Reverse voltage VR (V
)
SKH00071CED
−1
10
−1
10
Pulse width tW (ms
101
2
10
)
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