Panasonic MA3X701 Datasheet
Schottky Barrier Diodes (SBD)
MA3X701
Silicon epitaxial planar type
For high-frequency rectification
Unit : mm
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
■ Features
•
Mini type 3-pin package
•
Allowing to rectify under (I
= 700 mA) condition
F(AV)
+ 0.2
− 0.05
2.9
1
0.950.95
1.9 ± 0.2
2
1.45
3
− 0.05
+ 0.1
0.4
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
V
Average forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FSM
j
stg
30 V
30 V
700 mA
5A
125 °C
−55 to +150 °C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M4P
Internal Connection
1
2
− 0.06
+ 0.1
0.16
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59
3
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
2
Reverse recovery time
*
t
rr
Thermal resistance (1) Rth(j-a)(1) 420 °C/W
1
Thermal resistance (2)
*
Rth(j-a)(2) 330 °C/W
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. *1: Obtained by fixing the element to the printed-circuit board (copper foil area 0.8 mm × 20 mm)
*2:trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
VR = 30 V 80 µA
IZ = 700 mA 0.55 V
F
VR = 0 V, f = 1 MHz 120 pF
t
IF = IR = 100 mA 7.5 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA3X701
Schottky Barrier Diodes (SBD)
IF V
1
Ta = 125°C
−1
10
)
A
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
Forward voltage VF (V
IR T
10 000
1 000
)
µA
(
R
100
10
Reverse current I
1
0.1
−40 0 40 80 120 160 200
a
VR = 30 V
15 V
6 V
Ambient temperature Ta (°C
75°C
25°C
VF T
Ct V
a
IF = 700 mA
100 mA
10 mA
)
R
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
)
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
300
250
)
pF
(
t
200
150
100
Terminal capacitance C
50
0
0 5 10 15 20 25 30
Reverse voltage VR (V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 5 10 15 20 25 30
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.1
IR V
R
Ta = 125°C
Reverse voltage VR (V
I
t
F(surge)
0.3 3 30 100101
W
Ta = 25°C
t
W
Pulse width tW (ms
I
)
75°C
25°C
)
F(surge)
2
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