Panasonic MA3X557 Datasheet

PIN Diodes
MA3X557
Silicon epitaxial planar type
For UHF and SHF bands AGC
+ 0.2
2.8
0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
0.05
Unit : mm
Features
Small diode capacitance C
Large variable range of forward dynamic resistance r
Mini type package, allowing downsizing of equipment and auto-
f
+ 0.2
0.05
2.9
matic insertion through the taping package and magazine package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Power dissipation P
Operating ambient temperature*T
Storage temperature T
R
RM
F
D
opr
stg
Note) * : Maximum ambient temperature during operation
40 V
45 V
100 mA
150 mW
25 to +85 °C
55 to +150 °C
Marking Symbol: M30
Internal Connection
Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f1
r
f2
Note) 1.Rated input/output frequency: 100 MHz
2. Each characteristic is a standard for individual diode
3*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 40 V 100 nA
IF = 100 mA 1.05 1.2 V
F
VR = 15 V, f = 1 MHz 0.3 0.5 pF
D
IF = 10 µA, f = 100 MHz 1 2 kΩ
IF = 10 mA, f = 100 MHz 6 10
1.9 ± 0.2
0.1
+ 0.2
1.1
0.1 to 0.3
0.4 ± 0.2
0.950.95
0.8
1
2
Mini Type Package (3-pin)
1
2
0 to 0.1
3
1.45
3
0.05
+ 0.1
0.4
0.06
+ 0.1
0.16
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2
1
MA3X557
PIN Diodes
IF V
1 000
)
100
mA (
F
10
1
Forward current I
0.1 0 0.4 0.8 1.2 1.6 2.0
F
Forward voltage VF (V
rf I
F
10 k
)
(
f
1 k
100
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
2
1
) pF
(
0.5
D
0.3
0.2
0.1
Diode capacitance C
0.05
0.03
0.02 0 8 16 24 324 1220283640
CD V
R
f = 1 MHz
= 25°C
T
a
Reverse voltage VR (V
IR T
100
)
10
nA (
R
1
0.1
Reverse current I
0.01
)
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
a
VR = 40 V
)
10
Forward dynamic resistance r
1
0.01
0.1 1 10
Forward current IF (mA
)
2
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