Panasonic MA3X555 Datasheet
PIN Diodes
MA3X555
Silicon epitaxial planar type
For UHF and SHF bands AGC
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
Unit : mm
■ Features
•
Small diode capacitance C
•
Large variable range of forward dynamic resistance r
•
Mini type package, allowing downsizing of equipment and auto-
D
f
+ 0.2
matic insertion through the taping package and magazine package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Power dissipation P
Operating ambient temperature
Storage temperature T
R
RM
F
D
T
opr
stg
40 V
45 V
100 mA
150 mW
−25 to +85 °C
−55 to +150 °C
Marking Symbol: M2H
Internal Connection
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f1
r
f2
Note) 1．Rated input/output frequency: 100 MHz
2．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 40 V 100 nA
IF = 100 mA 1.05 1.2 V
F
VR = 15 V, f = 1 MHz 0.3 0.5 pF
D
IF = 10 µA, f = 100 MHz 1 2 kΩ
IF = 10 mA, f = 100 MHz 6 10 Ω
− 0.05
2.9
+ 0.2
0.1 to 0.3
0.4 ± 0.2
1.9 ± 0.2
− 0.1
1.1
1
0.950.95
2
0.8
Mini Type Package (3-pin)
1
2
3
0 to 0.1
3
1.45
+ 0.1
− 0.05
0.4
+ 0.1
− 0.06
0.16
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
Anode 1
1
MA3X555
PIN Diodes
IF V
1 000
)
100
mA
(
F
10
1
Forward current I
0.1
0 0.4 0.8 1.2 1.6 2.0
F
Forward voltage VF (V
rf I
10 k
)
Ω
(
f
1 k
100
F
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
2
1
)
pF
(
0.5
D
0.3
0.2
0.1
Diode capacitance C
0.05
0.03
0.02
0 8 16 24 324 1220283640
CD V
R
f = 1 MHz
= 25°C
T
a
Reverse voltage VR (V
IR T
100
)
10
nA
(
R
1
0.1
Reverse current I
0.01
)
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
a
VR = 40 V
)
10
Forward dynamic resistance r
1
0.01
0.1 1 10
Forward current IF (mA
)
2
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