Panasonic MA3X200F Datasheet

Switching Diodes

MA3X200F

Silicon epitaxial planar type

For switching circuits

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

− 0.05

Unit : mm

■ Features

•

Two elements contained in one package, allowing high-density
mounting

•

Soft recovery characteristic (T

•

Small terminal capacitance, C

: 100 ns)

rr

t

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward voltage

(DC)

Peak forward

current

Non-repetitive peak

forward surge current

Single I

Series 75

Single I

Series 170

Single I

*

Series 325

Junction temperature T

Storage temperature T

R

RM

F

FM

FSM

j

stg

80 V

80 V

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

R1

I

R2

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

VR = 75 V 10 nA

VR = 5 V, Ta = 85°C20nA

IF = 100 mA 1.2 V

F

IR = 100 µA80V

R

VR = 0 V, f = 1 MHz 2.5 pF

t

IF = 10 mA, VR = 6 V 100 ns

Irr = 0.1 · IR, RL = 100 Ω

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

+ 0.2

− 0.05

2.9

1.9 ± 0.2

− 0.1

+ 0.2

1.1

0.1 to 0.3

0.4 ± 0.2

Marking Symbol: M5M

Internal Connection

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

1

0.950.95

2

0.8

Mini Type Package (3-pin)

1

2

I

F

I

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

0 to 0.1

t

rr

= 0.1 · I

rr

1.45

3

1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2

3

t

R

+ 0.1

+ 0.1

− 0.05

0.4

− 0.06

0.16

1

MA3X200F

Switching Diodes

 V

1

−1

10

)

mA
(

−2

10

Ta = 150°C

F

100°C

−3

10

25°C

− 20°C

−4

10

Forward current I

−5

10

−6

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

 T

IR

VR = 80 V

)
nA

(

2

10

10

R

1

VF  T

F

1.2

1.0

)
V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

)

a

35 V

6 V

Ambient temperature Ta (°C

a IF

IF = 100 mA

10 mA

3 mA

2

10

10

)

nA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 20406080100120

)

IR  V

R

Ta = 150°C

100°C

25°C

Reverse voltage VR (V

)

−1

10

Reverse current I

−2

10

−3

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)

2