Panasonic MA3X199 Datasheet

Switching Diodes

MA3X199

Silicon epitaxial planar type

For high voltage switching circuit

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

− 0.05

Unit : mm

■ Features

•

High breakdown voltage: V

•

Short reverse recovery time t

•

Small package, allowing automatic mounting

= 200 V

R

rr

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Repetitive peak reverse voltage

V

Average forward current I

Repetitive peak forward current

I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

R

RRM

F(AV)

FRM

FSM

j

stg

200 V

250 V

100 mA

225 mA

500 mA

150 °C

−55 to +150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 20 MHz

2. * : trr measuring circuit

R

F

t

t

rr

+ 0.2

− 0.05

2.9

1.9 ± 0.2

− 0.1

+ 0.2

1.1

0.1 to 0.3

0.4 ± 0.2

0.950.95

0.8

1

2

0 to 0.1

1.45

3

− 0.05

+ 0.1

0.4

− 0.06

+ 0.1

0.16

1 : Anode 2 : NC 3 : Cathode

JEDEC : TO-236 EIAJ : SC-59

Mini Type Package (3-pin)

Marking Symbol: M3A

Internal Connection

1

3

2

VR = 200 V 1 µA

IF = 100 mA 1.2 V

VR = 0 V, f = 1 MHz 3 pF

IF = IR = 10 mA 60 ns

Irr = 1 mA, RL = 100 Ω

Bias Application Unit N-50BU

Pulse Generator (PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

t

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

I

F

= 10 mA

I

F

= 10 mA

I

R

= 100 Ω

R

L

t

rr

Irr = 1mA

t

1

MA3X199

Switching Diodes

IF  V

2

10

10

)

mA (

F

1

−1

10

Forward current I

−2

10

−3

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

100

10

) µA

(

R

1

0.1

Ta = 150°C

a

100°C

25°C

− 20°C

)

IR  V

2

10

10

) µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 40 80 120 160 200 240

R

Reverse voltage VR (V

Ct  V

1.6

1.4

) pF

1.2

(

t

1.0

0.8

0.6

R IR

Ta = 150°C

100°C

75°C

25°C

)

f = 1 MHz

= 25°C

T

a

1.2

VF  T

1.0

) V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

a

IF = 100 mA

10 mA

3 mA

)

Reverse current I

VR = 200 V

0.01

0.001

100 V

10 V

−40 0 40 80 120 160

Ambient temperature Ta (°C

0.4

Terminal capacitance C

0.2

0

0 40 80 120 160 200 240

)

Reverse voltage VR (V

)

2

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