Switching Diodes
MA3X198
Silicon epitaxial planar type
For general purpose
+ 0.2
2.8
− 0.3
+ 0.25
1.5
− 0.050.65 ± 0.15 0.65 ± 0.15
Unit : mm
■ Features
•
Two elements contained in one package, allowing high-density
mounting
•
Soft recovery characteristic (t
•
Can be connected in series
= 100 ns)
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Average forward
current
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Single I
Series 75
Single I
Series 170
Single I
*
Series 325
V
Junction temperature T
Storage temperature T
R
RRM
F(AV)
FRM
FSM
j
stg
40 V
40 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
VR = 40 V 10 nA
IF = 100 µA 0.65 0.72 V
IR = 100 mA 1.2 V
VR = 6 V, f = 1 MHz 1 2 pF
t
IF = 10 mA, VR = 6 V 100 ns
Irr = 0.1 · IR, RL = 100 Ω
1
0.950.95
− 0.05
+ 0.2
2.9
1.9 ± 0.2
2
− 0.1
+ 0.2
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2 EIAJ : SC-59A
Mini Type Package (3-pin)
Marking Symbol: M2F
Internal Connection
1
2
0 to 0.1
3
1.45
3
− 0.05
+ 0.1
0.4
− 0.06
+ 0.1
0.16
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
Irr = 0.1 · I
t
R
1
MA3X198
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
Ta = 150°C
1
100°C
Forward current I
10
10
25°C
− 20°C
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
T
a
VR = 30 V
)
nA
(
2
10
10
R
1
6 V
1 V
IR V
Ta = 150°C
Ct V
R
100°C
25°C
R IR
)
f = 1 MHz
= 25°C
T
a
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
3
10
)
A
(
2
10
F(surge)
10
2
10
)
10
nA
(
R
1
−1
10
Reverse current I
−2
10
)
0 102030405060
Reverse voltage VR (V
2.4
2.0
)
pF
(
t
1.6
1.2
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
−1
10
Reverse current I
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
0.8
Terminal capacitance C
0.4
0
)
0 102030405060
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
0.03
0.3 3 301010.1
Pulse width tW (ms
)
2