Panasonic MA3X158 Datasheet
Switching Diodes
MA3X158
Silicon epitaxial planar type
For small power rectification and surge absorption
Unit : mm
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
■ Features
•
High reverse voltage V
•
Large forward current I
•
Small package and allowing automatic mounting
R
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
V
Non-repetitive peak forward V
R
RRM
RSM
200 V
250 V
300 V
surge voltage
Output current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
F(AV)
FSM
j
stg
100 mA
500 mA
125 °C
−55 to +125 °C
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Note) Rated input/output frequency: 3 MHz
R
F
+ 0.2
− 0.05
2.9
1.9 ± 0.2
+ 0.2
− 0.1
1.1
0.1 to 0.3
0.4 ± 0.2
0.950.95
0.8
1
2
0 to 0.1
1.45
3
+ 0.1
− 0.05
0.4
+ 0.1
− 0.06
0.16
1 : Anode
2 : NC
3 : Cathode
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M1C
Internal Connection
1
3
2
VR = 200 V 1.0 µA
IF = 100 mA 1.3 V
1
MA3X158
Switching Diodes
IF V
2
10
Ta = 125°C
75°C
10
)
mA
(
F
10
Forward current I
10
10
25°C
– 20°C
1
–1
–2
–3
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
10
1
)
µA
(
R
−1
10
−2
10
a
VR = 200 V
100 V
IR V
10
1
)
µA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 40 80 120 160 200 240
)
Ta = 125°C
Reverse voltage VR (V
R
75°C
25°C
)
1.2
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160
VF T
a
IF = 100 mA
10 mA
1 mA
0.1 mA
Ambient temperature Ta (°C
)
Reverse current I
−3
10
−4
10
−40 0 40 80 120 160
Ambient temperature Ta (°C
)
2
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