Panasonic MA3X157A User Manual

Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X157A (MA157A)
Silicon epitaxial planar type
For switching circuits
Features
High switching speed
Both chips have even characteristics
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current
Peak forward
current
Non-repetitive peak
forward surge current
Junction temperature T
Storage temperature T
Note)*: t = 1 s
Single I
Series 65
Single I
Series 145
Single I
*
Series 325
t
R
RM
F
FM
FSM
j
stg
80 V
80 V
100
225
500
150 °C
55 to +150 °C
mA
mA
mA
Unit: mm
+0.10
0.40
10˚
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
+0.10
0.16
–0.06
1: Anode 1
0 to 0.1
2: Cathode 2 3: Anode 2
Cathode 1
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: MS
Internal Connection
3
1
2
0.4±0.2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator (PG-10N)
= 50
R
s
Publication date: November 2005 SKF00038EED
F
R
R
t
t
rr
Wave Form Analyzer (SAS-8130) Ri = 50
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
= 6 V
V
R
= 100
R
L
t
rr
I
rr
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
1
MA3X157A
This product complies with the RoHS Directive (EU 2002/95/EC).
3
10
2
10
)
mA (
Ta = 125°C
F
10
75°C
25°C
20°C
1
Forward current I
1
10
2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
T
2
10
10
) µA
(
R
1
1
10
a
VR = 80 V
40 V
IR V
Ct V
R
R IR
)
f = 1 MHz
= 25°C
T
a
1.2
1.0
) V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160
2
10
10
) µA
(
R
10
Reverse current I
10
10
)
) pF
(
Ta = 125°C
1
–1
–2
–3
75°C
25°C
0 20406080100120
Reverse voltage VR (V
10
t
1
VF T
a
IF = 10 mA
0.1 mA
Ambient temperature Ta (°C
3 mA
1 mA
)
Reverse current I
2
10
3
10
40 0 40 80 120 160
Ambient temperature Ta (°C
Terminal capacitance C
1
10
0 102030405060
)
Reverse voltage VR (V
)
2
SKF00038EED
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