Panasonic MA3X157A Datasheet

Switching Diodes

MA3X157A

Silicon epitaxial planar type

For switching circuits

Unit : mm

+ 0.2

2.8

− 0.3

+ 0.25

1.5

0.65 ± 0.15 0.65 ± 0.15

− 0.05

■ Features

• High switching speed

• Small terminal capacitance, C

t

• Both chips have even characteristics

• Can be connected in series

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current

(DC)

Repetitive peak

forward current

Non-repetitive peak

forward surge current

Single I

Series 65

Single I

Series 145

Single I

*

Series 325

Junction temperature T

Storage temperature T

RM

FRM

FSM

stg

R

F

j

−55 to +150 °C

100

225

500

150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Bias Application Unit N-50BU

A

Pulse Generator (PG-10N)

= 50 Ω

R

s

R

F

R

t

t

rr

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

80 V

80 V

mA

mA

mA

1

0.950.95

− 0.05

+ 0.2

2.9

1.9 ± 0.2

2

− 0.1

+ 0.2

0.8

1.1

0.1 to 0.3

0.4 ± 0.2

1 : Anode 1 2 : Cathode 2 3 : Anode 2

Cathode 1

Mini Type Package (3-pin)

Marking Symbol: MS

Internal Connection

1.45

3

− 0.05

+ 0.1

0.4

− 0.06

+ 0.1

0.16

0 to 0.1

JEDEC : TO-236 EIAJ : SC-59

1

3

2

VR = 75 V 0.1 µA

IF = 100 mA 1.2 V

IR = 100 µA80V

VR = 0 V, f = 1 MHz 2 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

t

t

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

rr

Irr = 0.1 · I

t

R

I

F

1

MA3X157A

Switching Diodes

3

10

2

10

)

mA (

Ta = 125°C

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

IF  V

75°C

25°C

−20°C

Forward voltage VF (V

2

10

10

) µA

(

R

1

−1

10

Reverse current I

−2

10

 T

VR = 80 V

F

a

40 V

IR  V

Ct  V

R

)

R IR

f = 1 MHz

= 25°C

T

a

2

10

10

) µA

(

R

Reverse current I

)

Ta = 125°C

1

–1

10

–2

10

–3

10

75°C

25°C

0 0.2 0.4 0.6 0.8 1.0 1.2

Reverse voltage VR (V

10

5

) pF

(

3

t

2

1

0.5

0.3

Terminal capacitance C

0.2

1.2

1.0

) V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

VF  T

a

IF = 10 mA

0.1 mA

Ambient temperature Ta (°C

3 mA

1 mA

)

−3

10

−40 0 40 80 120 160

Ambient temperature Ta (°C

2

0.1

)

0 102030405060

Reverse voltage VR (V

)

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