Panasonic MA3X152A Datasheet

Switching Diodes

MA3X152A

Silicon epitaxial planar type

For switching circuits

+ 0.2

2.8

− 0.3

+ 0.25

1.5

− 0.050.65 ± 0.15 0.65 ± 0.15

Unit : mm

■ Features

•

Short reverse recovery time t

•

Small terminal capacitance, C

rr

t

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current (DC) I

Peak forward current I

Non-repetitive peak forward I

surge current

*

Junction temperature T

Storage temperature T

R

RM

F

FM

FSM

j

−55 to +150 °C

stg

100 mA

225 mA

500 mA

150 °C

Note) * : t = 1 s

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Reverse voltage (DC) V

Terminal capacitance C

Reverse recovery time

*

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

R

F

R

t

t

rr

80 V

80 V

+ 0.2

− 0.05

2.9

1.9 ± 0.2

+ 0.2

− 0.1

1.1

0.1 to 0.3

0.4 ± 0.2

0.950.95

0.8

1

2

0 to 0.1

1.45

3

+ 0.1

− 0.05

0.4

+ 0.1

− 0.06

0.16

1 : Cathode 2 : NC 3 : Anode

JEDEC : TO-236

EIAJ : SC-59

Mini Type Package (3-pin)

Marking Symbol: MB

Internal Connection

1

3

2

VR = 75 V 0.1 µA

IF = 100 mA 1.2 V

IR = 100 µA80V

VR = 0 V, f = 1 MHz 2 pF

IF = 10 mA, VR = 6 V 3 ns

Irr = 0.1 · IR, RL = 100 Ω

Bias Application Unit N-50BU

Pulse Generator (PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer (SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

t

10%

90%

V

R

= 2 µs

t

p

= 0.35 ns

t

r

δ = 0.05

I

F

= 10 mA

I

F

= 6 V

V

R

= 100 Ω

R

L

t

rr

I

= 0.1 · I

rr

t

R

1

MA3X152A

Switching Diodes

IF  V

3

10

2

10

)

mA (

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

 T

10

1

) µA

(

R

−1

10

−2

10

Reverse current I

−3

10

−4

10

VR = 80 V

−40 0 40 80 120 160

a

Ambient temperature Ta (°C

Ta = 125°C

75°C

25°C

− 20°C

)

40 V

IR  V

Ct  V

R

Ta = 125°C

75°C

25°C

R IR

f = 1 MHz T

)

= 25°C

a

1.2

1.0

)

V

(

0.8

F

0.6

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160

)

2

10

10

) µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

0 20406080100120

Reverse voltage VR (V

10

5

)

pF

(

3

t

2

1

0.5

0.3

Terminal capacitance C

0.2

0.1

)

0 102030405060

Reverse voltage VR (V

VF  T

a

IF = 10 mA

0.1 mA

Ambient temperature Ta (°C

3 mA

1 mA

)

2

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