Panasonic MA3X057 Datasheet
Band Switching Diodes
MA3X057
Silicon epitaxial planar type
For band switching
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
− 0.05
Unit : mm
■ Features
•
Low forward dynamic resistance r
•
Less voltage dependence of diode capacitance C
•
Mini type package, allowing downsizing of equipment and
f
D
+ 0.2
automatic insertion through the taping package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current (DC) I
Operating ambient temperature*T
Storage temperature T
R
F
opr
stg
Note) * : Maximum ambient temperature during operation
35 V
100 mA
−25 to +85 °C
−55 to +150 °C
Marking Symbol: MX
Internal Connection
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance
*
r
f
Note) 1．Rated input/output frequency: 100 MHz
2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
VR = 33 V 0.01 100 nA
IF = 100 mA 0.88 1.0 V
F
VR = 15 V, f = 1 MHz 1.3 2.0 pF
D
IF = 3 mA, f = 100 MHz 0.78 1.15 Ω
− 0.05
2.9
+ 0.2
0.1 to 0.3
0.4 ± 0.2
1.9 ± 0.2
− 0.1
1.1
0.950.95
0.8
1
2
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
1
2
1.45
3
− 0.05
+ 0.1
0.4
− 0.06
+ 0.1
0.16
0 to 0.1
JEDEC : TO-236
EIAJ : SC-59A
3
1
MA3X057
Band Switching Diodes
IF V
3
10
2
10
(mA)
F
10
1
Forward current I
−1
10
0 0.2 0.4 0.6 0.8 1.0
F
Forward voltage VF (V
I
rf
1.0
)
Ω
(
0.8
f
0.6
F
Ta = 25°C
)
f = 100 MHz
= 25°C
T
a
10
CD V
8
6
4
)
pF
(
D
2
1
0.8
0.6
0.4
R
f = 1 MHz
= 25°C
T
a
Diode capacitance C
0.2
0.1
0 8 16 24 324 1220283640
Reverse voltage VR (V
rf f
1.0
)
Ω
(
0.8
f
0.6
IF = 3 mA
T
a
)
= 25°C
2
10
)
10
nA
(
R
1
−1
10
Reverse current I
−2
10
0 40 80 120 16020 60 100 140
IR T
Ambient temperature Ta (°C
a
VR = 33 V
)
0.4
0.2
Forward dynamic resistance r
0
1103 30 100
Forward current IF (mA
0.4
0.2
Forward dynamic resistance r
0
)
10 10030 300 1 000
Frequency f (MHz
)
2
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