Panasonic MA3V177 Datasheet
Switching Diodes
4.0 ± 0.2
marking
2.54 ± 0.15
1.271.27
3.0 ± 0.215.6 ± 0.5
2.0 ± 0.2
0.7 ± 0.1
0.45
+ 0.2
− 0.1
123
MA3V177
Silicon epitaxial planar type
For switching circuits
■ Features
•
Small terminal capacitance, C
•
Can be connected in series
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC) I
Peak forward current I
Junction temperature T
Storage temperature T
t
R
RM
F
FM
j
stg
100 mA
200 mA
150 °C
−55 to +150 °C
Unit : mm
40 V
40 V
1 : Anode
2 : Cathode
Anode
3 : Cathode
New S-Type Package
Internal Connection
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Note) 1. Rated input/output frequency: 100 MHz
2. *1: Between pins 3 and 2
*2: Between pins 2 and 1
1 32
R
t1
C
t2
VR = 40 V 0.1 µA
IF = 100 mA 1.2 V
F
IR = 100 µA40V
R
*1
VR = 0 V, f = 1 MHz 5.5 pF
2
*
3.0
1
MA3V177
Switching Diodes
IF V
3
10
)
2
10
mA
(
F
10
123
1
Forward current I
−1
10
0 0.4 0.8 1.2 1.6 2.0
F
T
a
Forward voltage VF (V
V
3
10
)
10
µA
(
R
Reverse current I
10
D1 (3-2)
2
10
123
1
−1
01020304050
R
D2 (2-1)
T
a
Reverse voltage VR (V
= 25°C
)
= 125°C
)
IF V
3
10
)
2
10
mA
(
F
10
123
1
Forward current I
−1
10
0 0.4 0.8 1.2 1.6 2.0
F
Forward voltage VF (V
VF T
1.2
1.0
)
V
(
0.8
F
0.6
0.4
a IR
Forward voltage V
0.2
123
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
Ta = 25°C
)
IF = 10 mA
3 mA
1 mA
0.1 mA
IR V
D1 (3-2)
VF T
R
a
T
= 25°C
a
D2 (2-1)
)
IF = 10 mA
3 mA
1 mA
0.1 mA
)
2
10
)
10
µA
(
R
1
123
−1
10
Reverse current I
−2
10
01020304050
Reverse voltage VR (V
1.2
1.0
)
V
(
0.8
F
0.6
0.4
Forward voltage V
0.2
123
0
−40 0 40 80 120 160
)
Ambient temperature Ta (°C
IR T
100
)
µA
(
10
R
123
1
Reverse current I
0.1
0 40 80 120 16020 60 100 140
Ambient temperature Ta (°C
2
a
D2 (2-1)
D1 (3-2)
)
Ct V
10
5
)
pF
(
3
t
2
1
0.5
0.3
Terminal capacitance C
123
0.2
0.1
0812416202428323640
Reverse voltage VR (V
R
f = 1 MHz
= 25°C
T
a
D1 (3-2
D2 (2-1
)
)
)
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